| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| FDS2072 |
FSC|Fairchild Semiconductor |
N/a |
50 |
 |
|
FDS2170N3 ,200V N-Channel PowerTrench MOSFETFeatures This N-Channel MOSFET has been designed • 3.0 A, 200 V. R = 128 mΩ @ V = 10 V DS(ON) GSs ..
FDS2170N3 ,200V N-Channel PowerTrench MOSFETApplications • Fast switching, low gate charge (26nC typical) • Synchronous rectifier • Bottomless ..
FDS2170N7 ,200V N-Channel PowerTrench MOSFETFeatures This N-Channel MOSFET has been designed • 3.0 A, 200 V. R = 128 mΩ @ V = 10 V DS(ON) GSs ..
FDS2570 ,150V N-Channel PowerTrench MOSFETFDS2570February 2001FDS2570 150V N-Channel PowerTrench MOSFET
FDS2570 ,150V N-Channel PowerTrench MOSFETFeaturesThis N-Channel MOSFET has been designed• 4A, 150 V. R = 80 mΩ @ V = 10 VDS(ON) GSspecifical ..
FQB2N60 ,600V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect 2.4A, 600V, R = 4.7Ω @V = 10 VDS(on) ..
FQB2N60TM ,600V N-Channel QFETFeaturesThese N-Channel enhancement mode power field effect 2.4A, 600V, R = 4.7Ω @V = 10 VDS(on) ..
FQB2N80 ,800V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect 2.4A, 800V, R = 6.3Ω @V = 10 VDS(on) ..
