| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| FDR858R |
FAIRCHILD|Fairchild Semiconductor |
N/a |
200 |
 |
|
FDR8702H ,20V N & P-Channel PowerTrench MOSFETElectrical Characteristics T = 25°C unless otherwise noted ASymbol Parameter Test Conditions Q Min ..
FDR8702H ,20V N & P-Channel PowerTrench MOSFETApplications • Fast switching speed. DC/DC converter Power management • High performance trench te ..
FDS2070N3 ,150V N-Channel PowerTrench MOSFETApplications • High power and current handling capability • Synchronous rectifier • Fast switching, ..
FDS2070N7 ,150V N-Channel PowerTrench MOSFETApplications • High power and current handling capability • Synchronous rectifier • Fast switching, ..
FDS2170N3 ,200V N-Channel PowerTrench MOSFETFeatures This N-Channel MOSFET has been designed • 3.0 A, 200 V. R = 128 mΩ @ V = 10 V DS(ON) GSs ..
FQB20N06LTM ,60V N-Channel Logic level QFETapplications such as automotive, DC/DC converters, and high efficiency switching for powermanagemen ..
FQB20N06TM ,60V N-Channel QFETapplications such as automotive, DC/DC converters, and high efficiency switching for powermanagemen ..
FQB22P10 ,100V P-Channel MOSFETapplications such as audio amplifier,high efficiency switching DC/DC converters, and DC motorcontro ..
