| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| FDR8508P/PB |
FAI|Fairchild Semiconductor |
N/a |
6002 |
 |
|
FDR8521L ,P-Channel MOSFET With Gate Driver For Load Switch ApplicationElectrical Characteristics A Symbol Parameter Test Conditions Min Typ Max UnitsOFF Characteristics ..
FDR8521L ,P-Channel MOSFET With Gate Driver For Load Switch ApplicationApplications • High density cell design for extremely low on-resistance.• Power management• Load sw ..
FDR858P ,Single P-Channel, Logic Level, PowerTrench TM MOSFETGeneral Description MOSFET, Logic Level, PowerTrenchSingle58P O
FDR8702H ,20V N & P-Channel PowerTrench MOSFETElectrical Characteristics T = 25°C unless otherwise noted ASymbol Parameter Test Conditions Q Min ..
FDR8702H ,20V N & P-Channel PowerTrench MOSFETApplications • Fast switching speed. DC/DC converter Power management • High performance trench te ..
FQB19N20C ,200V N-Channel Advance Q-FET C-SeriesFeaturesThese N-Channel enhancement mode power field effect • 19.0A, 200V, R = 0.17Ω @V = 10 VDS(on ..
FQB19N20TM ,200V N-Channel QFET
FQB1N60 ,600V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect 1.2A, 600V, R = 11.5Ω @V = 10 VDS(on) ..
