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FDR842PFairchildN/a3730avaiP-Channel 1.8V Specified PowerTrench MOSFET


FDR842P ,P-Channel 1.8V Specified PowerTrench MOSFETFeatures This P-Channel –1.8V specified MOSFET uses • –11 A, –12 V R = 9 mΩ @ V = –4.5 V DS(ON) ..
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FDR842P
P-Channel 1.8V Specified PowerTrench MOSFET
FDR842P December 2001 FDR842P     P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel –1.8V specified MOSFET uses • –11 A, –12 V R = 9 mΩ @ V = –4.5 V DS(ON) GS Fairchild’s advanced low voltage PowerTrench process. R = 12 mΩ @ V = –2.5 V DS(ON) GS It has been optimized for battery power management R = 16 mΩ @ V = –1.8 V applications. DS(ON) GS Applications • Fast switching speed • Power management • High performance trench technology for extremely low R DS(ON) • Load switch • High power and current handling capability • Battery protection S D 5 4 D S 6 3 7 2 G D 8 1 TM D SuperSOT -8 D o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage –12 V DSS V Gate-Source Voltage V GSS ± 8 I Drain Current – Continuous (Note 1a) –11 A D – Pulsed –50 Power Dissipation for Single Operation (Note 1a) 1.8 P W D (Note 1b) 1.0 (Note 1c) 0.9 T , T Operating and Storage Junction Temperature Range –55 to +150 °C J STG Thermal Characteristics °C/W R Thermal Resistance, Junction-to-Ambient (Note 1a) 70 θJA °C/W R Thermal Resistance, Junction-to-Case (Note 1) 20 θJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDR842P FDR842P 13’’ 12mm 2500 units FDR842P Rev D (W) 2001
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