FDR838P_NL ,P-Channel 2.5V Specified PowerTrench MOSFETApplications• High performance trench technology for extremely• Load switch low R .DS(ON)• Mo ..
FDR840P ,P-Channel 2.5V Specified PowerTrench MOSFETFeaturesThis P-Channel 2.5V specified MOSFET uses a rugged• –10 A, –20 V. R = 12 mΩ @ V = –4.5 VDS( ..
FDR842P ,P-Channel 1.8V Specified PowerTrench MOSFETFeatures This P-Channel –1.8V specified MOSFET uses • –11 A, –12 V R = 9 mΩ @ V = –4.5 V DS(ON) ..
FDR8508P ,Dual P-Channel, Logic Level, PowerTrench TM MOSFET ..
FDR8521L ,P-Channel MOSFET With Gate Driver For Load Switch ApplicationElectrical Characteristics A Symbol Parameter Test Conditions Min Typ Max UnitsOFF Characteristics ..
FDR8521L ,P-Channel MOSFET With Gate Driver For Load Switch ApplicationApplications • High density cell design for extremely low on-resistance.• Power management• Load sw ..
FQB16N25TM ,250V N-Channel QFET
FQB16N25TM ,250V N-Channel QFET
FQB17N08 ,80V N-Channel MOSFETapplications such as automotive,high efficiency switching for DC/DC converters, and DCmotor contro ..
FQB17N08L ,80V LOGIC N-Channel MOSFETapplications such as automotive, Low level gate drive requirements allowinghigh efficiency switchi ..
FQB17N08TM ,80V N-Channel QFETFeaturesThese N-Channel enhancement mode power field effect 16.5A, 80V, R = 0.115Ω @V = 10 VDS(on ..
FQB17P06 ,60V P-Channel MOSFETFeaturesThese P-Channel enhancement mode power field effect • -17A, -60V, R = 0.12Ω @V = -10 VDS(on ..
FDR838P_NL
P-Channel 2.5V Specified PowerTrench MOSFET
FDR838P March 1999 FDR838P TM P-Channel 2.5V Specified PowerTrench MOSFET Features General Description These P-Channel 2.5V specified MOSFETs are produced • -8 A, -20 V. R = 0.017 Ω @ V = -4.5 V ON DS( ) GS using Fairchild Semiconductor's advanced PowerTrench R = 0.024 Ω @ V = -2.5 V process that has been especially tailored to minimize the DS(ON) GS on-state resistance and yet maintain low gate charge for • Low gate charge (30nC typical). superior switching performance. • Fast switching speed. Applications • High performance trench technology for extremely • Load switch low R . DS(ON) • Motor driving • Power Management • Small footprint (38% smaller than a standard SO-8); low profile package (1 mm thick); power handling capability similar to SO-8. S D 5 4 D S 6 3 2 7 G D TM D 8 1 SuperSOT -8 D T = 25°C unless otherwise noted Absolute Maximum Ratings A Symbol Parameter Ratings Units V Drain-Source Voltage -20 V DSS V Gate-Source Voltage 8V GSS ± I Drain Current - Continuous (Note 1a) -8 A D - Pulsed -50 (Note 1a) P Power Dissipation for Single Operation 1.8 W D (Note 1b) 1.0 (Note 1c) 0.9 T , T Operating and Storage Junction Temperature Range -55 to +150 C J stg ° Thermal Characteristics (Note 1a) R Thermal Resistance, Junction-to-Ambient 70 C/W JA ° θ (Note 1) R Thermal Resistance, Junction-to-Case 20 C/W JC ° θ Package Outlines and Ordering Information Device Marking Device Reel Size Tape Width Quantity FDR838P 13’’ 12mm 3000 units 838P . 1999 FDR838P, Rev. C
