FDR836P ,P-Channel 2.5V Specified MOSFETFeaturesTM SuperSOT -8 P-Channel enhancement mode power -6.1 A, -20 V. R = 0.030 W @ V = -4.5 VOND ..
FDR838P ,P-Channel 2.5V Specified PowerTrench TM MOSFETGeneral DescriptionThese P-Channel 2.5V specified MOSFETs are produced• -8 A, -20 V. R = 0.017 Ω @ ..
FDR838P_NL ,P-Channel 2.5V Specified PowerTrench MOSFETApplications• High performance trench technology for extremely• Load switch low R .DS(ON)• Mo ..
FDR840P ,P-Channel 2.5V Specified PowerTrench MOSFETFeaturesThis P-Channel 2.5V specified MOSFET uses a rugged• –10 A, –20 V. R = 12 mΩ @ V = –4.5 VDS( ..
FDR842P ,P-Channel 1.8V Specified PowerTrench MOSFETFeatures This P-Channel –1.8V specified MOSFET uses • –11 A, –12 V R = 9 mΩ @ V = –4.5 V DS(ON) ..
FDR8508P ,Dual P-Channel, Logic Level, PowerTrench TM MOSFET ..
FQB15P12 ,120V P-Channel QFETapplications such as audio amplifier,high efficiency switching DC/DC converters, and DC motorcontro ..
FQB16N15TM ,150V N-Channel QFET
FQB16N25 ,250V N-Channel MOSFET
FQB16N25C ,250V N-Channel Advance Q-FET C-SeriesFeaturesThese N-Channel enhancement mode power field effect • 15.6A, 250V, R = 0.27Ω @V = 10 VDS(on ..
FQB16N25TM ,250V N-Channel QFET
FQB16N25TM ,250V N-Channel QFET
FDR836P
P-Channel 2.5V Specified MOSFET
FDR836P April 1999 FDR836P P-Channel 2.5V Specified MOSFET General Description Features TM SuperSOT -8 P-Channel enhancement mode power-6.1 A, -20 V. R = 0.030 W @ V = -4.5 V ON DS( ) GS field effect transistors are produced using Fairchild’s R = 0.040 W @ V = -2.5 V DS(ON) GS proprietary, high cell density, DMOS technology. This very high density process is especially tailored to mini- High density cell design for extremely low R . DS(ON) mize on-state resistance and provide superior switch- Small footprint (38% smaller than a standard SO-8); low ing performance. These devices are particularly suited profile package (1 mm thick); power handling capability for low voltage applications such as battery powered similar to SO-8. circuits or portable electronics where low in-line power loss, fast switching and resistance to transients are needed. S D 5 4 D S 6 3 2 7 G D TM D 8 1 SuperSOT -8 D T = 25°C unless otherwise noted Absolute Maximum Ratings A Symbol Parameter Ratings Units V Drain-Source Voltage -20 V DSS V Gate-Source Voltage 8V GSS ± I Drain Current - Continuous (Note 1a) -6.1 A D - Pulsed -18 (Note 1a) P Power Dissipation for Single Operation 1.8 W D (Note 1b) 1.0 (Note 1c) 0.9 T , T Operating and Storage Junction Temperature Range -55 to +150 C J stg ° Thermal Characteristics (Note 1a) R Thermal Resistance, Junction-to-Ambient 70 C/W JA ° θ (Note 1) R Thermal Resistance, Junction-to-Case 20 C/W JC ° θ Package Outlines and Ordering Information Device Marking Device Reel Size Tape Width Quantity FDR836P 13’’ 12mm 3000 units 836P . ã 1999 FDR836P, Rev. C
