FDR6580 ,N-Channel 2.5V Specified PowerTrench MOSFETGeneral Description MOSFETPowerTrenchJuly 2001FDR6580
FDR6674A ,30V N-Channel PowerTrench MOSFETApplications • High power and current handling capability in a smaller footprint than SO8 • Synchro ..
FDR6674A ,30V N-Channel PowerTrench MOSFETFeatures This N-Channel MOSFET has been designed • 11.5 A, 30 V. R = 9.5 mΩ @ V = 4.5 V DS(ON) GS ..
FDR6678A ,30V N-Channel PowerTrench MOSFETApplications • High power and current in a smaller footprint than • DC/DC converter SO-8 SD5 4DS6 ..
FDR8305N ,Dual N-Channel 2.5V Specified PowerTrench MOSFETApplications• Load switch High performance trench technology for extremely Motor driving lo ..
FDR8308P ,Dual P-Channel, Logic Level, PowerTrench TM MOSFETElectrical Characteristics (T = 25 C unless otherwise noted )AV Vo oI C CΔ / ΔTJI V V µ AT µ AI VI ..
FQB13N06LTM ,60V N-Channel Logic level QFETFeaturesThese N-Channel enhancement mode power field effect • 13.6A, 60V, R = 0.11Ω @V = 10 VDS(on) ..
FQB13N06LTM ,60V N-Channel Logic level QFETapplications such as automotive, DC/DC converters, and high efficiency switching for powermanagemen ..
FQB13N06TM ,60V N-Channel QFETFeaturesThese N-Channel enhancement mode power field effect • 13A, 60V, R = 0.135Ω @V = 10 VDS(on) ..
FQB13N10LTM ,100V N-Channel Logic Level QFETapplications such as highefficiency switching DC/DC converters, and DC motorcontrol.D D! !""!!""""G ..
FQB13N10TM ,100V N-Channel QFETapplications such as audioamplifier, high efficiency switching DC/DC converters, andDC motor contro ..
FQB13N50C ,500V N-Channel Advance Q-FET C-SeriesFeaturesThese N-Channel enhancement mode power field effect 13A, 500V, R = 0.48Ω @V = 10 VDS(on) ..
FDR6580
N-Channel 2.5V Specified PowerTrench MOSFET
FDR6580 FDR6580 Ò Ò N-Channel 2.5V Specified This N-Channel MOSFET has been designed · 11.2 A, 20 V.R = 9 m W @ V = 4.5 V specifically to improve the overall efficiency of DC/DC R = 11 m W = 2.5 V converters using either synchronous or conventional switching PWM controllers. It has been optimized for · High performance trench technology for extremely “low side” synchronous rectifier operation, providing an extremely low R in a small package. DS(ON) · High power and current handling capability in a smaller footprint than SO8 · Synchronous rectifier · DC/DC converter S D 54 D S 63 72 G D 81D D o T=25C unless otherwise notedA RatingsUnits VDrain-Source VoltageV VGate-Source Voltage ±V IDrain Current– ContinuousAD – Pulsed PPower Dissipation for Single OperationWD (Note 1c) T, TOperating and Storage Junction Temperature Range-55 to +150 °CJ Thermal Characteristics RqThermal Resistance, Junction-to-Ambient °C/W RThermal Resistance, Junction-to-Case °C/W qJC Device MarkingReel SizeTape widthQuantity FDR6580FDR658012mm2500 units Ó FDR6580 Rev C(W)2001 13’’ Device Package Marking and Ordering Information 20(Note 1) 70(Note 1a)JA STG 0.9 1.0 (Note 1b) 1.8(Note 1a) 50 11.2(Note 1a) GSS 12 DSS 20 ParameterSymbol Absolute Maximum Ratings SuperSOT -8 TM Applications low RON)DS( GSDS(ON) @ V GSDS(ON) FeaturesGeneral Description MOSFETPowerTrench July 2001
