FDR4410 ,N-Channel Enhancement Mode Field Effect TransistorFeaturesThe FDR4410 has been designed as a smaller, low cost9.3 A, 30 V. R = 0.013 Ω @ V = 10 V ..
FDR4410 ,N-Channel Enhancement Mode Field Effect TransistorElectrical Characteristics (T = 25 C unless otherwise noted )ASymbol Parameter Conditions Min Typ ..
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FDR4410
N-Channel Enhancement Mode Field Effect Transistor
April 1998 FDR4410 N-Channel Enhancement Mode Field Effect Transistor General Description Features The FDR4410 has been designed as a smaller, low cost 9.3 A, 30 V. R = 0.013 W @ V = 10 V DS(ON) GS alternative to the popular Si4410DY. R = 0.020 W @ V = 4.5 V. DS(ON) GS TM High density cell design for extremely low R . The SuperSOT -8 package is 40% smaller than the SO-8 DS(ON) TM package. Proprietary SuperSOT -8 small outline surface mount package with high power and current handling capability. TM The SuperSOT -8 advanced package design and optimized pinout allow the typical power dissipation to be similar to the bigger SO-8 package. TM TM SOT-23 SuperSOT -8 SOIC-16 SuperSOT -6 SO-8 SOT-223 5 4 S D D 3 S 6 7 2 G D D 1 8 pin 1 D TM SuperSOT -8 o Absolute Maximum Ratings T = 25 C unless otherwise noted A Symbol Parameter FDR4410 Units V Drain-Source Voltage 30 V DSS V Gate-Source Voltage ±20 V GSS Draint Current - Continuous (Note 1a) 9.3 A I D - Pulsed 40 P Maximum Power Dissipation (Note 1a) 1.8 W D (Note 1b) 1 (Note 1c) 0.9 T ,T Operating and Storage Temperature Range -55 to 150 °C J STG THERMAL CHARACTERISTICS R Thermal Resistance, Junction-to-Ambient (Note 1a) 70 °C/W qJA R Thermal Resistance, Junction-to-Case (Note 1) 20 °C/W qJC FDR4410 Rev.C © 1998 4410
