| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| FDR-10HL |
FUJITSU|Fujitsu Microelectronics |
N/a |
3000 |
 |
|
FDR4410 ,N-Channel Enhancement Mode Field Effect TransistorFeaturesThe FDR4410 has been designed as a smaller, low cost9.3 A, 30 V. R = 0.013 Ω @ V = 10 V ..
FDR4410 ,N-Channel Enhancement Mode Field Effect TransistorElectrical Characteristics (T = 25 C unless otherwise noted )ASymbol Parameter Conditions Min Typ ..
FDR4420A ,Single N-Channel, Logic Level, PowerTrench TM MOSFETElectrical Characteristics (T = 25 C unless otherwise noted )ASymbol Parameter Conditions Min Typ ..
FDR4420A ,Single N-Channel, Logic Level, PowerTrench TM MOSFETapplications where small package size is requiredwithout compromising power handling and fast swi ..
FDR6580 ,N-Channel 2.5V Specified PowerTrench MOSFETGeneral Description MOSFETPowerTrenchJuly 2001FDR6580
FQB12P10TM ,100V P-Channel QFETapplications such as audio amplifier,high efficiency switching DC/DC converters, and DC motorcontro ..
FQB12P20 ,200V P-Channel MOSFETMay 2000TMQFET QFET QFET QFETFQB12P20 / FQI12P20200V P-Channel MOSFET
FQB12P20TM ,200V P-Channel QFETMay 2000TMQFET QFET QFET QFETFQB12P20 / FQI12P20200V P-Channel MOSFET
