FDPF3860T ,N-Channel PowerTrench?MOSFET 100V, 20A, 38.2m?ApplicationsRDS(on) • Consumer Appliances• High Power and Current Handling Capability• LCD/LED/PDP ..
FDPF39N20 ,N-Channel UniFETTM MOSFET 200V, 39A, 66m?Applications(PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.•PDP TV• Lig ..
FDPF5N50T ,N-Channel UniFETTM MOSFET 500V, 5A, 1.4?applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and elec ..
FDPF5N50T ,N-Channel UniFETTM MOSFET 500V, 5A, 1.4?Features DescriptionTM ®UniFET MOSFET is Fairchild Semiconductor ’s high voltage •R = 1.15 (Typ. ..
FDPF5N50T. ,N-Channel UniFETTM MOSFET 500V, 5A, 1.4?Applications• LCD/LED TV• Lighting• Uninterruptible Power Supply• AC-DC Power SupplylicationsDGGDTO ..
FDPF5N50UT ,N-Channel UniFETTM Ultra FRFETTM MOSFET 500V, 4A, 2?applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and elec ..
FQAF47P06 ,60V P-Channel MOSFETFeaturesThese P-Channel enhancement mode power field effect • -38A, -60V, R = 0.026Ω @V = -10 VDS(o ..
FQAF65N06 ,60V N-Channel MOSFETapplications such as automotive, DC/DC converters, and high efficiency switching for powermanagemen ..
FQAF70N10 ,100V N-Channel MOSFETapplications such as audio amplifier,high efficiency switching DC/DC converters, and DC motorcontro ..
FQAF70N15 ,N-Channel Power MOSFET
FQAF7N60 ,600V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect 5.7A, 600V, R = 1.0Ω @V = 10 VDS(on) ..
FQAF7N90 ,900V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 5.2A, 900V, R = 1.55Ω @V = 10 VDS(on) ..
FDPF3860T
N-Channel PowerTrench?MOSFET 100V, 20A, 38.2m?
® FDPF3860T N-Channel PowerTrench MOSFET April 2013 FDPF3860T tm ® N-Channel PowerTrench MOSFET 100 V, 20 A, 38.2 mΩ Description General Description •R = 29.1 mΩ ( Typ ) @ V = 10 V, I = 5.9 A This N-Channel MOSFET is produced using Fairchild Semicon- DS(on) GS D ® ® ductor ’s advanced PowerTrench process that has been tai- • Fast Switching Speed lored to minimize the on-state resistance while maintaining superior switching performance. • Low Gate Charge • High Performance Trench Technology for Extremely Low Applications R DS(on) • Consumer Appliances • High Power and Current Handling Capability • LCD/LED/PDP TV • RoHS Compliant • Synchronous Rectification • Uninterruptible Power Supply • Micro Solar Inverter D G G TO-220F D S S o MOSFET Maximum Ratings T = 25 C unless otherwise noted C Symbol Parameter FDPF3860T Unit V Drain to Source Voltage 100 V DSS V Gate to Source Voltage ±20 V GSS o - Continuous (T = 25 C) 20 C I Drain Current A D o - Continuous (T = 100 C) 12.7 C I Drain Current - Pulsed (Note 1) 80 A DM E Single Pulsed Avalanche Energy (Note 2) 278 mJ AS I Avalanche Current (Note 1) 20 A AR E Repetitive Avalanche Energy (Note 1) 3.4 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 15 V/ns o (T = 25 C) 33.8 W C P Power Dissipation D o o - Derate above 25C0.27W/ C o T , T Operating and Storage Temperature Range -55 to +150 C J STG Maximum Lead Temperature for Soldering Purpose, o T 300 C L 1/8” from Case for 5 Seconds Thermal Characteristics Symbol Parameter FDPF3860T Unit R Thermal Resistance, Junction to Case, Max. 3.7 θJC o C/W R Thermal Resistance, Junction to Ambient, Max. 62.5 θJA ©2008 1 FDPF3860T Rev. C2
