FDPF15N65 ,N-Channel UniFETTM MOSFET 650V, 15A, 440 m?Features DescriptionTM ®UniFET MOSFET is Fairchild Semiconductor ’s high voltage •R = 440 m (Max. ..
FDPF16N50 ,N-Channel UniFETTM MOSFET 500V, 16A, 380 m?Applications(PFC), flat panel display (FPD) TV power, ATX and electronic • LCD/LED/PDP TV lamp ball ..
FDPF16N50T ,N-Channel UniFETTM MOSFET 500V, 16A, 380 m?Applications(PFC), flat panel display (FPD) TV power, ATX and electronic • LCD/LED/PDP TV lamp ball ..
FDPF18N20FT ,N-Channel UniFETTM FRFET?MOSFET 200V, 18A, 140m?Features Description•R = 0.12Ω ( Typ.)@ V = 10V, I = 9A These N-Channel enhancement mode power fiel ..
FDPF18N50 ,N-Channel UniFETTM MOSFET 500V, 18A, 265m?Applications(PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.• LCD/LED/PD ..
FDPF18N50T ,N-Channel UniFETTM MOSFET 500V, 18A, 265m?Applications(PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.• LCD/LED/PD ..
FQAF13N50 ,500V N-Channel MOSFET
FQAF13N80 ,800V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 8.0A, 800V, R = 0.75Ω @V = 10 VDS(on) ..
FQAF14N30 ,300V N-Channel MOSFET
FQAF15N70 ,700V N-Channel MOSFET
FQAF16N25 ,250V N-Channel MOSFET
FQAF17P10 ,100V P-Channel MOSFETapplications such as audio amplifier,high efficiency switching DC/DC converters, and DC motorcontro ..
FDPF15N65
N-Channel UniFETTM MOSFET 650V, 15A, 440 m?
TM FDPF15N65 N-Channel UniFET MOSFET March 2013 FDPF15N65 TM N-Channel UniFET MOSFET 650 V, 15 A, 440 m Features Description TM ® UniFET MOSFET is Fairchild Semiconductor ’s high voltage •R = 440 m (Max.) @ V = 10 V, I = 7.5 A DS(on) GS D MOSFET family based on planar stripe and DMOS technology. • Low Gate Charge (Typ. 48.5 nC) This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche •Low C (Typ. 23.6 pF) rss energy strength. This device family is suitable for switching • 100% Avalanche Tested power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic Applications lamp ballasts. • LCD/LED/PDP TV and Monitor • Uninterruptible Power Supply D G G D TO-220F S S Absolute Maximum Ratings Symbol Parameter FDPF15N65 Unit V Drain-Source Voltage 650 V DSS I Drain Current - Continuous (T = 25C) 15* A D C - Continuous (T = 100C) 9.5* A C (Note 1) I Drain Current - Pulsed A DM 60* V Gate-Source voltage 30 V GSS (Note 2) E Single Pulsed Avalanche Energy 637 mJ AS I Avalanche Current (Note 1) 15 A AR E Repetitive Avalanche Energy (Note 1) 25.0 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns P Power Dissipation (T = 25C) 38.5 W D C - Derate above 25C 0.3 W/C T T Operating and Storage Temperature Range -55 to +150 C J, STG T Maximum Lead Temperature for Soldering Purpose, L 300 C 1/8” from Case for 5 Seconds * Drain current limited by maximum junction termperature. Thermal Characteristics Symbol Parameter FDPF15N65 Unit R Thermal Resistance, Junction-to-Case, Max. 3.3 JC C/W R Thermal Resistance, Junction-to-Ambient, Max. 62.5 JA ©2006 1 FDPF15N65 Rev. C0
