FDPF12N50NZ ,N-Channel UniFETTM II MOSFET 500V, 11.5A, 520m?TMFDP12N50NZ / FDPF12N50NZ N-Channel UniFET II MOSFETMarch 2013FDP12N50NZ / FDPF12N50NZ ..
FdPF12N50t ,N-Channel UniFETTM MOSFET 500V, 11.5A, 650m?Features DescriptionTM ®•R = 550 m (Typ.) @ V = 10 V, I = 6 A UniFET MOSFET is Fairchild Semicond ..
FDPF12N50T ,N-Channel UniFETTM MOSFET 500V, 11.5A, 650m?Applications• LCD/LED/PDP TV• Lighting• Uninterruptible Power SupplyDGGGDTO-220 DTO-220FSSSoMOSFET ..
FDPF15N65 ,N-Channel UniFETTM MOSFET 650V, 15A, 440 m?Features DescriptionTM ®UniFET MOSFET is Fairchild Semiconductor ’s high voltage •R = 440 m (Max. ..
FDPF16N50 ,N-Channel UniFETTM MOSFET 500V, 16A, 380 m?Applications(PFC), flat panel display (FPD) TV power, ATX and electronic • LCD/LED/PDP TV lamp ball ..
FDPF16N50T ,N-Channel UniFETTM MOSFET 500V, 16A, 380 m?Applications(PFC), flat panel display (FPD) TV power, ATX and electronic • LCD/LED/PDP TV lamp ball ..
FQA9N90C_F109 ,N-Channel QFET?MOSFET 900V, 9.0A, 1.4?Features• 9 A, 900 V, R = 1.4 Ω (Max.) @ V = 10 V, I = 4.5 A This N-Channel enhancement mode power ..
FQAF10N80 ,800V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 6.7A, 800V, R = 1.05Ω @V = 10 VDS(on) ..
FQAF12P20 ,200V P-Channel MOSFETMay 2000TMQFET QFET QFET QFETFQAF12P20200V P-Channel MOSFET
FQAF13N50 ,500V N-Channel MOSFET
FQAF13N80 ,800V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 8.0A, 800V, R = 0.75Ω @V = 10 VDS(on) ..
FQAF14N30 ,300V N-Channel MOSFET
FDPF12N50NZ
N-Channel UniFETTM II MOSFET 500V, 11.5A, 520m?
TM FDP12N50NZ / FDPF12N50NZ N-Channel UniFET II MOSFET March 2013 FDP12N50NZ / FDPF12N50NZ TM N-Channel UniFET II MOSFET 500 V, 11.5 A, 520 m Features Description TM ® •R = 460 m (Typ.) @ V = 10 V, I = 5.75 A UniFET II MOSFET is Fairchild Semiconductor ’s high volt- DS(on) GS D age MOSFET family based on advanced planar stripe and • Low Gate Charge (Typ. 23 nC ) DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and • Low C (Typ. 14 pF ) rss also provides superior switching performance and higher ava- • 100% Avalanche Tested lanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM • ESD Improved Capability surge stress. This device family is suitable for switching power • RoHS Compliant converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. Applications • LCD/LED/PDP TV • Lighting • Uninterruptible Power Supply DD GG G G D TO-220 D TO-220F S S SS o MOSFET Maximum Ratings T = 25 C unless otherwise noted* C Symbol Parameter FDP12N50NZ FDPF12N50NZ Unit V Drain to Source Voltage 500 V DSS V Gate to Source Voltage ±25 V GSS o - Continuous (T = 25 C) 11.5 11.5* C I Drain Current A D o - Continuous (T = 100 C) 6.9 6.9* C I Drain Current - Pulsed (Note 1) 46 46* A DM E Single Pulsed Avalanche Energy (Note 2) 560 mJ AS I Avalanche Current (Note 1) 11.5 A AR E Repetitive Avalanche Energy (Note 1) 17 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns o (T = 25 C) 170 42 W C P Power Dissipation D o o - Derate above 25 C 1.37 0.33 W/ C o T , T Operating and Storage Temperature Range -55 to +150 C J STG Maximum Lead Temperature for Soldering Purpose, o T 300 C L 1/8” from Case for 5 Seconds *Dran current limited by maximum junction temperature Thermal Characteristics Symbol Parameter FDP12N50NZ FDPF12N50NZ Unit R Thermal Resistance, Junction to Case, Max. 0.73 3.0 JC o R Thermal Resistance, Case to Sink Typ 0.5 - C/W CS Thermal Resistance, Junction to Ambient, Max. 62.5 62.5 R JA ©2010 1 FDP12N50NZ / FDPF12N50NZ Rev. C0
