FDPF085N10A ,N-Channel PowerTrench?MOSFET 100V, 40A, 8.5m?ApplicationsRDS(on)• Consumer Appliances• High Power and Current Handling Capability•LED TV• RoHS C ..
FDPF10N50FT ,N-Channel UniFETTM FRFET?MOSFET 500V, 9A, 850m?ApplicationsThis device family is suitable for switching power converter appli-• LCD/ LED/ PDP TV c ..
FDPF12N50NZ ,N-Channel UniFETTM II MOSFET 500V, 11.5A, 520m?TMFDP12N50NZ / FDPF12N50NZ N-Channel UniFET II MOSFETMarch 2013FDP12N50NZ / FDPF12N50NZ ..
FdPF12N50t ,N-Channel UniFETTM MOSFET 500V, 11.5A, 650m?Features DescriptionTM ®•R = 550 m (Typ.) @ V = 10 V, I = 6 A UniFET MOSFET is Fairchild Semicond ..
FDPF12N50T ,N-Channel UniFETTM MOSFET 500V, 11.5A, 650m?Applications• LCD/LED/PDP TV• Lighting• Uninterruptible Power SupplyDGGGDTO-220 DTO-220FSSSoMOSFET ..
FDPF15N65 ,N-Channel UniFETTM MOSFET 650V, 15A, 440 m?Features DescriptionTM ®UniFET MOSFET is Fairchild Semiconductor ’s high voltage •R = 440 m (Max. ..
FQA9N90 ,900V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 8.6A, 900V, R = 1.3Ω @V = 10 VDS(on) ..
FQA9N90C ,900V N-Channel Q-FETFQA9N90CTMQFETFQA9N90C900V N-Channel MOSFET
FQA9N90C_F109 ,N-Channel QFET?MOSFET 900V, 9.0A, 1.4?Features• 9 A, 900 V, R = 1.4 Ω (Max.) @ V = 10 V, I = 4.5 A This N-Channel enhancement mode power ..
FQAF10N80 ,800V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 6.7A, 800V, R = 1.05Ω @V = 10 VDS(on) ..
FQAF12P20 ,200V P-Channel MOSFETMay 2000TMQFET QFET QFET QFETFQAF12P20200V P-Channel MOSFET
FQAF13N50 ,500V N-Channel MOSFET
FDPF085N10A
N-Channel PowerTrench?MOSFET 100V, 40A, 8.5m?
® FDPF085N10A N-Channel PowerTrench MOSFET March 2013 FDPF085N10A ® N-Channel PowerTrench MOSFET 100 V, 40 A, 8.5 mΩ Features General Description •R = 6.5 mΩ ( Typ.)@ V = 10V, I = 40A This N-Channel MOSFET is produced using Fairchild DS(on) GS D ® ® Semiconductor ’s advance PowerTrench process that has • Fast Switching Speed been tailored to minimize the on-state resistance while maintain- ing superior switching performance. • Low Gate Charge, Q = 31 nC(Typ.) G • High Performance Trench Technology for Extremely Low Applications R DS(on) • Consumer Appliances • High Power and Current Handling Capability •LED TV • RoHS Compliant • Synchronous Rectification for ATX / Sever / Telecom PSU • Motor Drives and Uninterruptible Power Supplies • Micro Solar Inverter D G G TO-220F D S S o MOSFET Maximum Ratings T = 25 C unless otherwise noted C Symbol Parameter FDPF085N10A Unit V Drain to Source Voltage 100 V DSS V Gate to Source Voltage ±20 V GSS o -Continuous (T = 25 C) 40 C I Drain Current A D o -Continuous (T = 100 C) 28 C I Drain Current - Pulsed (Note 1) 160 A DM E Single Pulsed Avalanche Energy (Note 2) 269 mJ AS dv/dt Peak Diode Recovery dv/dt (Note 3) 6.0 V/ns o (T = 25 C) 33.3 W C P Power Dissipation D o o - Derate above 25C0.22W/ C o T , T Operating and Storage Temperature Range -55 to +175 C J STG Maximum Lead Temperature for Soldering Purpose, o T 300 C L 1/8” from Case for 5 Seconds Thermal Characteristics Symbol Parameter FDPF085N10A Unit R Thermal Resistance, Junction to Case, Max. 4.5 θJC o C/W R Thermal Resistance, Junction to Ambient, Max. 62.5 θJA ©2011 1 FDPF085N10A Rev. C0
