FDB8880_NL ,30V N-Channel PowerTrench MOSFETFeatures General Description
FDB8880-FDB8880_NL-FDP8880
30V N-Channel PowerTrench MOSFET
FDP8880 / FDB8880 February 2005 FDP8880 / FDB8880 ® N-Channel PowerTrench MOSFET 30V, 54A, 11.6mΩ Features General Description r = 14.5mΩ, V = 4.5V, I = 40A This N-Channel MOSFET has been designed specifically to DS(ON) GS D improve the overall efficiency of DC/DC converters using r = 11.6mΩ, V = 10V, I = 40A either synchronous or conventional switching PWM DS(ON) GS D controllers. It has been optimized for low gate charge, low High performance trench technology for extremely low r and fast switching speed. DS(ON) r DS(ON) Low gate charge High power and current handling capability Applications DC/DC converters DRAIN (FLANGE) DRAIN D SOURCE (FLANGE) GATE DRAIN GATE G SOURCE TO-220AB TO-263AB S FDP SERIES FDB SERIES www.fairchildsemicom ©2005 1 FDP8880 / FDB8880 Rev. A
