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Partno	Mfg	Dc	Qty	Available	Descript
FDP7N50	FAIRCHIL	N/a	50	avai	N-Channel UniFET?MOSFET 500V, 7A, 900 m?

FDP7N50 ,N-Channel UniFET?MOSFET 500V, 7A, 900 m?Applicationslamp ballasts.• ALCD/LED TV• Lighting• Uninterruptible Power Supply• AC-DC Power Supply ..
FDP8447L ,40V N-Channel PowerTrench?MOSFETApplications Inverter Power SuppliesDGGDSTO-220FDP SeriesSMOSFET Maximum Ratings T = 25°C unless ..
FDP8860 ,30V N-Channel PowerTrench?MOSFETGeneral Description Max r = 2.5mΩ at V = 10V, I = 80AThis N-Channel MOSFET has been designed speci ..
FDP8870 ,30V N-Channel PowerTrench MOSFETFeaturesThis N-Channel MOSFET has been designed specifically to r = 4.1mΩ , V = 10V, I = 35ADS(ON) ..
FDP8874 ,30V N-Channel PowerTrench MOSFETFeaturesThis N-Channel MOSFET has been designed specifically to r = 5.3mΩ , V = 10V, I = 40ADS(ON) ..
FDP8876 ,30V N-Channel PowerTrench?MOSFETFeatures r = 8.5mΩ, V = 10V, I = 40ADS(ON) GS DThis N-Channel MOSFET has been designed specificall ..
FQA7N60 ,600V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect 7.7A, 600V, R = 1.0Ω @V = 10 VDS(on) ..
FQA7N80C ,800V N-Channel Advance Q-FET C-SeriesFeaturesThese N-Channel enhancement mode power field effect 7.0A, 800V, R = 1.9Ω @V = 10 VDS(on) ..
FQA7N90 ,900V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 7.4A, 900V, R = 1.55Ω @V = 10 VDS(on) ..
FQA7N90 ,900V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 7.4A, 900V, R = 1.55Ω @V = 10 VDS(on) ..
FQA7N90 ,900V N-Channel MOSFETFQA7N90March 2001TMQFETFQA7N90900V N-Channel MOSFET
FQA7N90M ,900V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 7A, 900V, R = 1.8Ω @V = 10 VDS(on) GS ..

FDP7N50
N-Channel UniFET?MOSFET 500V, 7A, 900 m?
TM FDP7N50 N-Channel UniFET MOSFET March 2013 FDP7N50 TM N-Channel UniFET MOSFET 500 V, 7 A, 900 m Features Description TM ® UniFET MOSFET is Fairchild Semiconductor ’s high voltage •R = 900 m (Max.) @ V = 10 V, I = 3.5 A DS(on) GS D MOSFET family based on planar stripe and DMOS technology. • Low Gate Charge (Typ. 12.8 nC) This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche •Low C (Typ. 9 pF) rss energy strength. This device family is suitable for switching • 100% Avalanche Tested power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic Applications lamp ballasts. • ALCD/LED TV • Lighting • Uninterruptible Power Supply • AC-DC Power Supplypplications D G G D TO-220 S S Absolute Maximum Ratings Symbol Parameter FDP7N50 Unit V Drain-Source Voltage 500 V DSS I Drain Current - Continuous (T = 25C) 7 A D C - Continuous (T = 100C) 4.2 A C (Note 1) I Drain Current - Pulsed 28 A DM V Gate-Source voltage 30 V GSS (Note 2) E Single Pulsed Avalanche Energy 270 mJ AS I Avalanche Current (Note 1) 7 A AR E Repetitive Avalanche Energy (Note 1) 8.9 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns P Power Dissipation (T = 25C) 89 W D C - Derate above 25C 0.71 W/C T T Operating and Storage Temperature Range -55 to +150 C J, STG T Maximum Lead Temperature for Soldering Purpose, L 300 C 1/8” from Case for 5 Seconds Thermal Characteristics Symbol Parameter FDP7N50 Unit R Thermal Resistance, Junction-to-Case, Max. 1.4 JC R 0.5 CS Thermal Resistance, Case-to-Sink, Typ. C/W 62.5 R Thermal Resistance, Junction-to-Ambient, Max. JA ©2007 1 FDP7N50 Rev. C0

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