FDP6676 ,30V N-Channel Logic Level PowerTrench MOSFETApplications • High performance trench technology for extremely low R DS(ON)• Synchronous rectifie ..
FDP6676 ,30V N-Channel Logic Level PowerTrench MOSFETFDP6676/FDB6676 April 2001 FDP6676/FDB6676 30V N-Channel Logic Level PowerTrench MOSFET
FDP6676 ,30V N-Channel Logic Level PowerTrench MOSFETApplications • High performance trench technology for extremely low R DS(ON)• Synchronous rectifie ..
FDP6676 ,30V N-Channel Logic Level PowerTrench MOSFETFeatures This N-Channel MOSFET has been designed • 42 A, 30 V. R = 6.0 mΩ @ V = 10 V DS(ON) GSspec ..
FDP6676S ,30V N-Channel PowerTrench SyncFET TMFDP6676S/FDB6676S October 2001 FDP6676S / FDB6676S ™30V N-Channel PowerTrench SyncFET
FDP6676S ,30V N-Channel PowerTrench SyncFET TMFeatures This MOSFET is designed to replace a single MOSFET • 38 A, 30 V. R = 6.5 mΩ @ V = 10 V DS( ..
FQA44N08 ,80V N-Channel MOSFETapplications such as automotive, highefficiency switching for DC/DC converters, and DC motorcontrol ..
FQA44N10 ,100V N-Channel MOSFETapplications such as audioamplifiers, high efficiency switching DC/DC converters, andDC motor contr ..
FQA44N30 ,300V N-Channel MOSFET
FQA44N30 ,300V N-Channel MOSFET
FQA44N30 ,300V N-Channel MOSFET
FQA55N10 ,100V N-Channel MOSFETapplications such as audio amplifier,high efficiency switching DC/DC converters, and DC motorcontro ..
FDP6676
30V N-Channel Logic Level PowerTrench MOSFET
FDP6676/FDB6676 April 2001 FDP6676/FDB6676 30V N-Channel Logic Level PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed • 42 A, 30 V. R = 6.0 mΩ @ V = 10 V DS(ON) GS specifically to improve the overall efficiency of DC/DC R = 7.5 mΩ @ V = 4.5 V DS(ON) GS converters using either synchronous or conventional switching PWM controllers. It has been optimized for • Critical DC electrical parameters specified at “low side” synchronous rectifier operation, providing an extremely low R . elevated temperature DS(ON) Applications • High performance trench technology for extremely low R DS(ON) • Synchronous rectifier • DC/DC converter • 175°C maximum junction temperature rating . D D G G G S TO-263AB TO-220 D FDP Series FDB Series S S o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 30 V DSS V Gate-Source Voltage ± 16 V GSS I Drain Current – Continuous (Note 1) 84 A D – Pulsed (Note 1) 240 P D Total Power Dissipation @ T = 25°C 93 W C Derate above 25°C 0.48 W°C T , T Operating and Storage Junction Temperature Range -65 to +175 J STG °C Thermal Characteristics R Thermal Resistance, Junction-to-Case 1.6 θJC °C/W R θJA Thermal Resistance, Junction-to-Ambient 62.5 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDP6676 FDP6676 Tube n/a 45 FDB6676 FDB6676 13” 24mm 800 units FDP6676/FDB6676 Rev C(W) 2000
