FDP33N25 ,N-Channel UniFETTM MOSFET 250V, 33A, 94m?Features DescriptionTM ®UniFET MOSFET is Fairchild Semiconductor ’s high voltage •R = 94 m (Max.) ..
FDP3632 ,N-Channel UltraFET ?Trench MOSFET 100V, 80A, 9mOhmFDB3632 / FDP3632 / FDI3632July 2002FDB3632 / FDP3632 / FDI3632®N-Channel UltraFET Trench MOSFET100 ..
FDP3651U ,N-Channel PowerTrench?MOSFET 100V, 80A, 18m?Applications•R = 15 mΩ ( Typ.)@ V = 10 V, I = 80 ADS(on) GS D• Consumer Appliances• High Performa ..
FDP3652 ,N-Channel PowerTrench ?MOSFET 100V, 61A, 16mOhmFDB3652 / FDP3652 / FDI3652July 2002FDB3652 / FDP3652 / FDI3652®N-Channel PowerTrench MOSFET100V, 6 ..
FDP3672 ,N-Channel PowerTrench MOSFET, 105V, 41A, 0.033 Ohms @ VGS = 10V, TO-220 PackageFDP3672September 2003FDP3672®N-Channel PowerTrench MOSFET105V, 41A, 33mΩ
FDP3682 ,N-Channel UltraFET ?Trench MOSFET 100V, 32A, 36mOhmApplications r = 32mΩ (Typ.), V = 10V, I = 32A DC/DC converters and Off-Line UPSDS(ON) GS D Q ( ..
FQA13N50C ,500V N-Channel Advance Q-FET C-SeriesFeaturesThese N-Channel enhancement mode power field effect 13.5A, 500V, R = 0.48Ω @V = 10 VDS(on ..
FQA13N50CF ,N-Channel QFET?FRFET?MOSFET 500V, 15A, 480m?Features Description• 15 A, 500 V, R = 48 mΩ (Max.) @ V = 10 V, This N-Channel enhancement mode pow ..
FQA13N80 ,800V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 12.6A, 800V, R = 0.75Ω @V = 10 VDS(on ..
FQA13N80 ,800V N-Channel MOSFETFQA13N80March 2001TMQFETFQA13N80800V N-Channel MOSFET
FQA13N80_F109 ,N-Channel QFET?MOSFET 800V, 12.6A, 750m?Features Description• 12.6 A, 800 V, R = 750 mΩ (Max.) @ V = 10 V This N-Channel enhancement mode p ..
FQA13N80_F109 ,N-Channel QFET?MOSFET 800V, 12.6A, 750m?®FQA13N80_F109 N-Channel QFET MOSFETApril 2013FQA13N80_F109®N-Channel QFET MOSFET800 V, 12.6 A, 75 ..
FDP33N25
N-Channel UniFETTM MOSFET 250V, 33A, 94m?
TM FDPF33N25T N-Channel UniFET MOSFET March 2013 FDPF33N25T TM N-Channel UniFET MOSFET 250 V, 33 A, 94 m Features Description TM ® UniFET MOSFET is Fairchild Semiconductor ’s high voltage •R = 94 m (Max.) @ V = 10 V, I = 16.5 A DS(on) GS D MOSFET family based on planar stripe and DMOS technology. • Low Gate Charge (Typ.36.8 nC) This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche • Low Crss (Typ. 39 pF) energy strength. This device family is suitable for switching • Improved dv/dt Capability power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic Applications lamp ballasts. •PDP TV • Lighting • Uninterruptible Power Supply • AC-DC Power Supply D G G D TO-220F S S Absolute Maximum Ratings Symbol Parameter FDPF33N25T Unit V Drain-Source Voltage 250 V DSS I Drain Current - Continuous (T = 25C) 33* A D C - Continuous (T = 100C) 20.4* A C (Note 1) I Drain Current - Pulsed A DM 132* V Gate-Source voltage 30 V GSS (Note 2) E Single Pulsed Avalanche Energy 918 mJ AS (Note 1) I Avalanche Current 33 A AR (Note 1) E Repetitive Avalanche Energy 23.5 mJ AR (Note 3) dv/dt Peak Diode Recovery dv/dt 4.5 V/ns P Power Dissipation (T = 25C) 37 W D C - Derate above 25C 0.29 W/C T T Operating and Storage Temperature Range -55 to +150 C J, STG T Maximum Lead Temperature for Soldering Purpose, L 300 C 1/8” from Case for 5 Seconds *Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter FDPF33N25T Unit R Thermal Resistance, Junction-to-Case, Max. 3.4 C/W JC R Thermal Resistance, Junction-to-Ambient, Max. 62.5 C/W JA ©2007 1 FDPF33N25T Rev. C0
