FDP2572 ,N-Channel UltraFET ?Trench MOSFET 150V, 29A, 54mOhmApplicationsr = 45mΩ (Typ.), V = 10V, I = 9A DC/DC converters and Off-Line UPSDS(ON) GS DQ (tot ..
FDP2670 ,200V N-Channel PowerTrench MOSFETFeaturesThis N-Channel MOSFET has been designed• 19 A, 200 V. R = 130 mΩ @ V = 10 VDS(ON) GSspecifi ..
FDP26N40 ,N-Channel UniFETTM MOSFET 400V, 26A, 160m?Applications• Uninterruptible Power Supply• AC-DC Power SupplyDGG DTO-220 SSoMOSFET Maximum ..
FDP2710 ,N-Channel PowerTrench?MOSFET 250V, 50A, 42.5m?Applications • High Power and Current Handing Capability• Consumer Appliances• Ro ..
FDP3205 ,N-Channel PowerTrench® MOSFET 55V, 100A, 7.5mOhmsFeatures Description•R = 6.1mΩ ( Typ.)@ V = 10V, I = 59A • This N-Channel MOSFET is produced using ..
FDP33N25 ,N-Channel UniFETTM MOSFET 250V, 33A, 94m?Features DescriptionTM ®UniFET MOSFET is Fairchild Semiconductor ’s high voltage •R = 94 m (Max.) ..
FQA11N90C_F109 ,N-Channel QFET?MOSFET 900V, 11.0A, 1.1?Features• 11 A, 900 V, R = 1.1 Ω (Max.) @ V = 10 V, This N-Channel enhancement mode power MOSFET is ..
FQA12N60 ,600V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect 12A, 600V, R = 0.7 Ω @ V = 10 VDS(on) ..
FQA13N50C ,500V N-Channel Advance Q-FET C-SeriesFeaturesThese N-Channel enhancement mode power field effect 13.5A, 500V, R = 0.48Ω @V = 10 VDS(on ..
FQA13N50CF ,N-Channel QFET?FRFET?MOSFET 500V, 15A, 480m?Features Description• 15 A, 500 V, R = 48 mΩ (Max.) @ V = 10 V, This N-Channel enhancement mode pow ..
FQA13N80 ,800V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 12.6A, 800V, R = 0.75Ω @V = 10 VDS(on ..
FQA13N80 ,800V N-Channel MOSFETFQA13N80March 2001TMQFETFQA13N80800V N-Channel MOSFET
FDP2572
N-Channel UltraFET ?Trench MOSFET 150V, 29A, 54mOhm
FDB2572 / FDP2572 July 2002 FDB2572 / FDP2572 ® N-Channel UltraFET Trench MOSFET 150V, 29A, 54mΩ Features Applications r = 45mΩ (Typ.), V = 10V, I = 9A DC/DC converters and Off-Line UPS DS(ON) GS D Q (tot) = 26nC (Typ.), V = 10V g GS Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low Body Diode High Voltage Synchronous Rectifier UIS Capability (Single Pulse and Repetitive Pulse) Direct Injection / Diesel Injection System Qualified to AEC Q101 42V Automotive Load Control Formerly developmental type 82860 Electronic Valve Train System D DRAIN (FLANGE) SOURCE GATE DRAIN GATE G DRAIN SOURCE (FLANGE) TO-263AB TO-220AB FDB SERIES FDP SERIES S MOSFET Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter Ratings Units V Drain to Source Voltage 150 V DSS V Gate to Source Voltage ±20 V GS Drain Current o 29 A Continuous (T = 25 C, V = 10V) C GS o I Continuous (T = 100 C, V = 10V) 20 A D C GS o o Continuous (T = 25 C, V = 10V, R = 43 C/W) 4 A amb GS θJA Pulsed Figure 4 A E Single Pulse Avalanche Energy (Note 1) 36 mJ AS Power dissipation 135 W P D o o Derate above 25C0.9W/ C o T , T Operating and Storage Temperature -55 to 175 C J STG Thermal Characteristics o R Thermal Resistance Junction to Case TO-220,TO-263 1.11 C/W θJC o R Thermal Resistance Junction to Ambient TO-220, TO-263 (Note 2) 62 C/W θJA 2 o R Thermal Resistance Junction to Ambient TO-263, 1in copper pad area 43 C/W θJA This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http:///products/discrete/reliability/index.html. All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. ©2002 FDB2572 / FDP2572 Rev. A2
