FDP2570 ,150V N-Channel PowerTrench MOSFETFDP2570/FDB2570August 2001FDP2570/FDB2570 150V N-Channel PowerTrench MOSFET
FDP2570 ,150V N-Channel PowerTrench MOSFETFeaturesThis N-Channel MOSFET has been designed• 22 A, 150 V. R = 80 mΩ @ V = 10 VDS(ON) GSspecific ..
FDP2572 ,N-Channel UltraFET ?Trench MOSFET 150V, 29A, 54mOhmApplicationsr = 45mΩ (Typ.), V = 10V, I = 9A DC/DC converters and Off-Line UPSDS(ON) GS DQ (tot ..
FDP2670 ,200V N-Channel PowerTrench MOSFETFeaturesThis N-Channel MOSFET has been designed• 19 A, 200 V. R = 130 mΩ @ V = 10 VDS(ON) GSspecifi ..
FDP26N40 ,N-Channel UniFETTM MOSFET 400V, 26A, 160m?Applications• Uninterruptible Power Supply• AC-DC Power SupplyDGG DTO-220 SSoMOSFET Maximum ..
FDP2710 ,N-Channel PowerTrench?MOSFET 250V, 50A, 42.5m?Applications • High Power and Current Handing Capability• Consumer Appliances• Ro ..
FQA11N90C_F109 ,N-Channel QFET?MOSFET 900V, 11.0A, 1.1?Features• 11 A, 900 V, R = 1.1 Ω (Max.) @ V = 10 V, This N-Channel enhancement mode power MOSFET is ..
FQA12N60 ,600V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect 12A, 600V, R = 0.7 Ω @ V = 10 VDS(on) ..
FQA13N50C ,500V N-Channel Advance Q-FET C-SeriesFeaturesThese N-Channel enhancement mode power field effect 13.5A, 500V, R = 0.48Ω @V = 10 VDS(on ..
FQA13N50CF ,N-Channel QFET?FRFET?MOSFET 500V, 15A, 480m?Features Description• 15 A, 500 V, R = 48 mΩ (Max.) @ V = 10 V, This N-Channel enhancement mode pow ..
FQA13N80 ,800V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 12.6A, 800V, R = 0.75Ω @V = 10 VDS(on ..
FQA13N80 ,800V N-Channel MOSFETFQA13N80March 2001TMQFETFQA13N80800V N-Channel MOSFET
FDP2570
150V N-Channel PowerTrench MOSFET
FDP2570/FDB2570 August 2001 FDP2570/FDB2570 150V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed • 22 A, 150 V. R = 80 mΩ @ V = 10 V DS(ON) GS specifically for switching on the primary side in the R = 90 mΩ @ V = 6 V DS(ON) GS isolated DC/DC converter application. Any application requiring a 150V MOSFETs with low on-resistance and • Low gate charge (40nC typical) fast switching will benefit. These MOSFETs feature faster switching and lower • Fast switching speed gate charge than other MOSFETs with comparable RDS specifications. (ON) • High performance trench technology for extremely low R DS(ON) The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power • 175°C maximum junction temperature rating supply designs with higher overall efficiency. D D G G G S TO-220 TO-263AB D FDP Series FDB Series S S o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 150 V DSS V Gate-Source Voltage ± 20 V GSS I Drain Current – Continuous (Note 1) 22 A D – Pulsed (Note 1) 50 A P D Total Power Dissipation @ T = 25°C 93 W C Derate above 25°C 0.63 W°/C T , T Operating and Storage Junction Temperature Range –65 to +175 °C J STG Thermal Characteristics R θJC Thermal Resistance, Junction-to-Case 1.6 °C/W R Thermal Resistance, Junction-to-Ambient 62.5 θJA °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDB2570 FDB2570 13’’ 24mm 800 units FDP2570 FDP2570 Tube n/a 45 units 2001 FDP2570/FDB2570 Rev C(W)
