FDP18N20F ,N-Channel UniFETTM FRFET?MOSFET 200V, 18A, 140m?Features Description•R = 0.12Ω ( Typ.)@ V = 10V, I = 9A These N-Channel enhancement mode power fiel ..
FDP18N50 ,N-Channel UniFETTM MOSFET 500V, 18A, 265m?Features DescriptionTM ®• R = 265 mΩ (Max.) @ V = 10 V, I = 9A UniFET MOSFET is Fairchild Semicond ..
FDP18N50 ,N-Channel UniFETTM MOSFET 500V, 18A, 265m?Applications(PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.• LCD/LED/PD ..
FDP24N40 ,N-Channel UniFETTM MOSFET 400V, 24A, 175m?Applications• Uninterruptible Power Supply• AC-DC Power SupplyDGGDTO-220SSoMOSFET Maximum Ratings ..
FDP2532 ,N-Channel PowerTrench ?MOSFET 150V, 79A, 16mOhmFDB2532 / FDP2532 / FDI2532August 2002FDB2532 / FDP2532 / FDI2532®N-Channel PowerTrench MOSFET150V, ..
FDP2532. ,N-Channel PowerTrench ?MOSFET 150V, 79A, 16mOhmFDB2532 / FDP2532 / FDI2532August 2002FDB2532 / FDP2532 / FDI2532®N-Channel PowerTrench MOSFET150V, ..
FQA10N60C ,600V N-Channel Advance Q-FET C-SeriesFeaturesThese N-Channel enhancement mode power field effect 10A, 600V, R = 0.73Ω @V = 10 VDS(on) ..
FQA10N60C ,600V N-Channel Advance Q-FET C-SeriesFeaturesThese N-Channel enhancement mode power field effect 10A, 600V, R = 0.73Ω @V = 10 VDS(on) ..
FQA10N80 ,800V N-Channel MOSFETSeptember 2000TMQFETFQA10N80800V N-Channel MOSFET
FQA10N80C ,800V N-Channel Advance Q-FET C-SeriesFQA10N80CTMQFETFQA10N80C800V N-Channel MOSFET
FQA11N40 ,400V N-Channel MOSFET
FQA11N90 ,900V N-Channel MOSFETSeptember 2000TMQFET QFET QFET QFETFQA11N90900V N-Channel MOSFET
FDP18N20F
N-Channel UniFETTM FRFET?MOSFET 200V, 18A, 140m?
FDP18N20F / FDPF18N20FT N-Channel MOSFET September 2009 TM UniFET FDP18N20F / FDPF18N20FT tm N-Channel MOSFET 200V, 18A, 0.14Ω Features Description •R = 0.12Ω ( Typ.)@ V = 10V, I = 9A These N-Channel enhancement mode power field effect DS(on) GS D transistors are produced using Fairchild’s proprietary, planar • Low gate charge ( Typ. 20nC) stripe, DMOS technology. • Low C ( Typ. 24pF) rss This advanced technology has been especially tailored to mini- mize on-state resistance, provide superior switching perfor- • Fast switching mance, and withstand high energy pulse in the avalanche and • 100% avalanche tested commutation mode. These devices are well suited for high efficient switching mode power supplies and active power factor • Improve dv/dt capability correction. • RoHS compliant D G TO-220 TO-220F G D S G D S FDP Series FDPF Series S o MOSFET Maximum Ratings T = 25 C unless otherwise noted C Symbol Parameter FDP18N20F FDPF18N20FT Units V Drain to Source Voltage 200 V DSS V Gate to Source Voltage ±30 V GSS o -Continuous (T = 25 C) 18 18* C I Drain Current A D o -Continuous (T = 100 C) 10.8 10.8* C I Drain Current - Pulsed (Note 1) 72 72* A DM E Single Pulsed Avalanche Energy (Note 2) 324 mJ AS I Avalanche Current (Note 1) 18 A AR E Repetitive Avalanche Energy (Note 1) 10 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns o (T = 25 C) 100 41 W C P Power Dissipation D o o - Derate above 25 C 0.83 0.33 W/ C o T , T Operating and Storage Temperature Range -55 to +150 C J STG Maximum Lead Temperature for Soldering Purpose, o T 300 C L 1/8” from Case for 5 Seconds *Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter FDP18N20F FDPF18N20FT Units R Thermal Resistance, Junction to Case 1.2 3.0 θJC o R Thermal Resistance, Case to Sink Typ. 0.5 - C/W θCS R Thermal Resistance, Junction to Ambient 62.5 62.5 θJA ©2009 1 FDP18N20F / FDPF18N20FT Rev. A
