FDP15N50 ,15A, 500V, 0.38 Ohm, N-Channel SMPS Power MOSFETFeatures Low Gate Charge Q results in Simple DriveSwitch Mode Power Supplies(SMPS), such as gRequi ..
FDP18N20F ,N-Channel UniFETTM FRFET?MOSFET 200V, 18A, 140m?Features Description•R = 0.12Ω ( Typ.)@ V = 10V, I = 9A These N-Channel enhancement mode power fiel ..
FDP18N50 ,N-Channel UniFETTM MOSFET 500V, 18A, 265m?Features DescriptionTM ®• R = 265 mΩ (Max.) @ V = 10 V, I = 9A UniFET MOSFET is Fairchild Semicond ..
FDP18N50 ,N-Channel UniFETTM MOSFET 500V, 18A, 265m?Applications(PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.• LCD/LED/PD ..
FDP24N40 ,N-Channel UniFETTM MOSFET 400V, 24A, 175m?Applications• Uninterruptible Power Supply• AC-DC Power SupplyDGGDTO-220SSoMOSFET Maximum Ratings ..
FDP2532 ,N-Channel PowerTrench ?MOSFET 150V, 79A, 16mOhmFDB2532 / FDP2532 / FDI2532August 2002FDB2532 / FDP2532 / FDI2532®N-Channel PowerTrench MOSFET150V, ..
FQA10N60C ,600V N-Channel Advance Q-FET C-SeriesFQA10N60CTMQFETFQA10N60C600V N-Channel MOSFET
FQA10N60C ,600V N-Channel Advance Q-FET C-SeriesFeaturesThese N-Channel enhancement mode power field effect 10A, 600V, R = 0.73Ω @V = 10 VDS(on) ..
FQA10N60C ,600V N-Channel Advance Q-FET C-SeriesFeaturesThese N-Channel enhancement mode power field effect 10A, 600V, R = 0.73Ω @V = 10 VDS(on) ..
FQA10N80 ,800V N-Channel MOSFETSeptember 2000TMQFETFQA10N80800V N-Channel MOSFET
FQA10N80C ,800V N-Channel Advance Q-FET C-SeriesFQA10N80CTMQFETFQA10N80C800V N-Channel MOSFET
FQA11N40 ,400V N-Channel MOSFET
FDP15N50
15A, 500V, 0.38 Ohm, N-Channel SMPS Power MOSFET
FDH15N50 / FDP15N50 August 2002 FDH15N50 / FDP15N50 15A, 500V, 0.38 Ohm, N-Channel SMPS Power MOSFET Applications Features Low Gate Charge Q results in Simple Drive Switch Mode Power Supplies(SMPS), such as g Requirement • PFC Boost Improved Gate, Avalanche and High Reapplied dv/dtTwo-Switch Forward Converter Ruggedness Single Switch Forward Converter Reduced r DS(ON)Flyback Converter Buck ConverterReduced Miller Capacitance and Low Input Capacitance High Speed Switching Improved Switching Speed with Low EMI 175°C Rated Junction Temperature Package Symbol JEDEC TO-247 JEDEC TO-220 D SOURCE DRAIN GATE G DRAIN (BOTTOM) DRAIN S (FLANGE) SOURCE DRAIN GATE o Absolute Maximum Ratings T = 25 C unless otherwise noted C Symbol Parameter Ratings Units V Drain to Source Voltage 500 V DSS V Gate to Source Voltage ±30 V GS Drain Current o 15 A Continuous (T = 25 C, V = 10V) C GS I D o Continuous (T = 100 C, V = 10V) 11 A C GS 1 Pulsed 60 A Power dissipation 300 W P D o o Derate above 25 C 2 W/ C o T , T Operating and Storage Temperature -55 to 175 C J STG o Soldering Temperature for 10 seconds 300 (1.6mm from case) C Thermal Characteristics o R Thermal Resistance Junction to Case 0.50 C/W θJC o R Thermal Resistance Case to Sink, Flat, Greased Surface 0.24 C/W θCS o R Thermal Resistance Junction to Ambient (TO-247) 40 C/W θJA o R Thermal Resistance Junction to Ambient (TO-220) 62 C/W θJA ©2002 FDH15N50 / FDP15N50 RevC, August 2002
