| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| FDP14AN06LAO |
FAI|Fairchild Semiconductor |
N/a |
104 |
 |
|
FDP150N10 ,N-Channel PowerTrench?MOSFET 100V, 57A, 15m?General Description•R = 12 mΩ ( Typ.) @ V = 10 V, I = 49 A This N-Channel MOSFET is produced using ..
FDP15N50 ,15A, 500V, 0.38 Ohm, N-Channel SMPS Power MOSFETFeatures Low Gate Charge Q results in Simple DriveSwitch Mode Power Supplies(SMPS), such as gRequi ..
FDP18N20F ,N-Channel UniFETTM FRFET?MOSFET 200V, 18A, 140m?Features Description•R = 0.12Ω ( Typ.)@ V = 10V, I = 9A These N-Channel enhancement mode power fiel ..
FDP18N50 ,N-Channel UniFETTM MOSFET 500V, 18A, 265m?Features DescriptionTM ®• R = 265 mΩ (Max.) @ V = 10 V, I = 9A UniFET MOSFET is Fairchild Semicond ..
FDP18N50 ,N-Channel UniFETTM MOSFET 500V, 18A, 265m?Applications(PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.• LCD/LED/PD ..
FQA10N60C ,600V N-Channel Advance Q-FET C-SeriesFQA10N60CTMQFETFQA10N60C600V N-Channel MOSFET
FQA10N60C ,600V N-Channel Advance Q-FET C-SeriesFeaturesThese N-Channel enhancement mode power field effect 10A, 600V, R = 0.73Ω @V = 10 VDS(on) ..
FQA10N60C ,600V N-Channel Advance Q-FET C-SeriesFeaturesThese N-Channel enhancement mode power field effect 10A, 600V, R = 0.73Ω @V = 10 VDS(on) ..
