FDP060AN08A0 ,Discrete Automotive N-Channel PowerTrench MOSFET, 75V, 80A, 0.006 Ohms @ VGS = 10V, TO-220AB PackageApplications•r = 4.8mΩ (Typ.), V = 10V, I = 80A 42V Automotive Load ControlDS(ON) GS DQ (tot) = ..
FDP090N10 ,N-Channel PowerTrench?MOSFET 100V, 75A, 9m?General Description•R = 7.2 mΩ ( Typ.) @ V = 10 V, I = 75 A This N-Channel MOSFET is producedusing ..
FDP100N10 ,N-Channel PowerTrench?MOSFET 100V, 75A, 10m?ApplicationsRDS(on)• Synchronous Rectification for ATX / Server / Telecom PSU• High Power and Curre ..
FDP10AN06A0 ,N-Channel PowerTrench ?MOSFET 60V, 75A, 10.5mOhmApplications•r = 9.5mΩ (Typ.), V = 10V, I = 75A Motor / Body Load ControlDS(ON) GS DQ (tot) = 28 ..
FDP14AN06LA0 ,Discrete Automotive N-Channel PowerTrench MOSFET, 60V, 61A, 0.014 Ohm, TO-220 PackageFDB14AN06LA0 / FDP14AN06LA0January 2004FDB14AN06LA0 / FDP14AN06LA0®N-Channel PowerTrench MOSFET60V, ..
FDP14AN06LA0 ,Discrete Automotive N-Channel PowerTrench MOSFET, 60V, 61A, 0.014 Ohm, TO-220 PackageApplications•r = 12.8mΩ (Typ.), V = 5V, I = 60A Motor / Body Load ControlDS(ON) GS DQ (tot) = 24 ..
FQA10N60C ,600V N-Channel Advance Q-FET C-SeriesFQA10N60CTMQFETFQA10N60C600V N-Channel MOSFET
FQA10N60C ,600V N-Channel Advance Q-FET C-SeriesFeaturesThese N-Channel enhancement mode power field effect 10A, 600V, R = 0.73Ω @V = 10 VDS(on) ..
FQA10N60C ,600V N-Channel Advance Q-FET C-SeriesFeaturesThese N-Channel enhancement mode power field effect 10A, 600V, R = 0.73Ω @V = 10 VDS(on) ..
FQA10N80 ,800V N-Channel MOSFETSeptember 2000TMQFETFQA10N80800V N-Channel MOSFET
FQA10N80C ,800V N-Channel Advance Q-FET C-SeriesFQA10N80CTMQFETFQA10N80C800V N-Channel MOSFET
FQA11N40 ,400V N-Channel MOSFET
FDP060AN08A0
Discrete Automotive N-Channel PowerTrench MOSFET, 75V, 80A, 0.006 Ohms @ VGS = 10V, TO-263/D2PAK Package
FDB060AN08A0 / FDP060AN08A0 November 2002 FDB060AN08A0 / FDP060AN08A0 ® N-Channel PowerTrench MOSFET 75V, 80A, 6.0mΩ Features Applications •r = 4.8mΩ (Typ.), V = 10V, I = 80A 42V Automotive Load Control DS(ON) GS D Q (tot) = 73nC (Typ.), V = 10VStarter / Alternator Systems g GS Low Miller ChargeElectronic Power Steering Systems Low Q Body DiodeElectronic Valve Train Systems RR UIS Capability (Single Pulse and Repetitive Pulse)DC-DC converters and Off-line UPS Qualified to AEC Q101Distributed Power Architectures and VRMs Primary Switch for 24V and 48V systems Formerly developmental type 82680 D DRAIN SOURCE GATE (FLANGE) DRAIN GATE G DRAIN SOURCE (FLANGE) TO-220AB TO-263AB S FDP SERIES FDB SERIES MOSFET Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter Ratings Units V Drain to Source Voltage 75 V DSS V Gate to Source Voltage ±20 V GS Drain Current o 80 A Continuous (T < 127 C, V = 10V) C GS I D o o Continuous (T = 25 C, V = 10V, with R = 43 C/W) 16 A amb GS θJA Pulsed Figure 4 A E Single Pulse Avalanche Energy (Note 1) 350 mJ AS Power dissipation 255 W P D o o Derate above 25C1.7W/ C o T , T Operating and Storage Temperature -55 to 175 C J STG Thermal Characteristics o R Thermal Resistance Junction to Case TO-220,TO-263 0.58 C/W θJC o R Thermal Resistance Junction to Ambient TO-220,TO-263 (Note 2) 62 C/W θJA 2 o R Thermal Resistance Junction to Ambient TO-263, 1in copper pad area 43 C/W θJA This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http:///products/discrete/reliability/index.html. All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. ©2002 FDB060AN08A0 / FDP060AN08A0 Rev. A
