FDN358P ,Single P-Channel, Logic Level, PowerTrench MOSFETFeatures This P-Channel Logic Level MOSFET is produced • –1.5 A, –30 V. R = 125 mΩ @ V = –10 V DS(O ..
FDN358P_NL ,Single P-Channel, Logic Level, PowerTrench MOSFETapplications: load switching and power management, low R . DS(ON)battery charging circuits, and DC/ ..
FDN359AN ,N-Channel Logic Level PowerTrench MOSFETElectrical Characteristics (T = 25 C unless otherwise noted )AV Vo oI = C CΔ / Δ TJI V V 1 µ AT µ A ..
FDN359BN ,30V N-Channel Logic Level PowerTrench?MOSFETElectrical Characteristics T = 25°C unless otherwise noted ASymbol Parameter Test Conditions MinTyp ..
FDN359BN ,30V N-Channel Logic Level PowerTrench?MOSFETapplications where low in-line power SOT-23 package. Identical pin out to SOT-23 with 30% loss and ..
FDN360P ,Single P-Channel, PowerTrench MOSFETFeatures This P-Channel Logic Level MOSFET is produced • –2 A, –30 V. R = 80 mΩ @ V = –10 V DS(ON) ..
FPN330 ,NPN Low Saturation TransistorFPN330 / FPN330AFPN330FPN330ATO-226CBENPN Low Saturation TransistorThese devices are designed for h ..
FPN330A ,NPN Low Saturation TransistorFPN330 / FPN330AFPN330FPN330ATO-226CBENPN Low Saturation TransistorThese devices are designed for h ..
FPN530 ,NPN Low Saturation TransistorFPN530 / FPN530AFPN530FPN530ATO-226CBENPN Low Saturation TransistorThese devices are designed for h ..
FPN530A ,NPN Low Saturation TransistorFPN530 / FPN530AFPN530FPN530ATO-226CBENPN Low Saturation TransistorThese devices are designed for h ..
FPN560 ,NPN Low Saturation TransistorFPN560 / FPN560AFPN560FPN560ATO-226CBENPN Low Saturation TransistorThese devices are designed for h ..
FPN560A ,NPN Low Saturation TransistorFPN560 / FPN560AFPN560FPN560ATO-226CBENPN Low Saturation TransistorThese devices are designed for h ..
FDN358P
Single P-Channel, Logic Level, PowerTrench MOSFET
FDN358P May 2002 FDN358P Single P-Channel, Logic Level, PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced • –1.5 A, –30 V. R = 125 mΩ @ V = –10 V DS(ON) GS using Fairchild Semiconductor advanced Power Trench R = 200 mΩ @ V = –4.5 V DS(ON) GS process that has been especially tailored to minimize the on-state resistance and yet maintain low gate • Low gate charge (4 nC typical) charge for superior switching performance. These devices are well suited for portable electronics • High performance trench technology for extremely applications: load switching and power management, low R . DS(ON) battery charging circuits, and DC/DC conversion. • High power version of industry Standard SOT-23 package. Identical pin-out to SOT-23 with 30% higher power handling capability. D D S G S TM G SuperSOT -3 o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage –30 V DSS V Gate-Source Voltage V GSS ±20 I Drain Current – Continuous (Note 1a) –1.5 A D – Pulsed –5 P Power Dissipation for Single Operation (Note 1a) 0.5 D W (Note 1b) 0.46 T , T Operating and Storage Junction Temperature Range –55 to +150 J STG °C Thermal Characteristics Thermal Resistance, Junction-to-Ambient (Note 1a) 250 °C/W R θJA °C/W R Thermal Resistance, Junction-to-Case (Note 1) 75 θJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 358 FDN358P 7’’ 8mm 3000 units FDN358P Rev F (W) 2002
