FDN340 ,Single P-Channel/ Logic Level/ PowerTrench MOSFETapplications: Load switching and power management,• High performance trench technology for extremel ..
FDN340P ,Single P-Channel, Logic Level, PowerTrench MOSFETFeatures This P-Channel Logic Level MOSFET is produced • –2A, 20 V R = 70 mΩ @ V = –4.5 V DS(ON) GS ..
FDN342P ,P-Channel 2.5V Specified PowerTrench TM MOSFET * + ..
FDN352AP ,Single P-Channel, PowerTrenchGeneral Description –1.3 A, –30V R = 180 mΩ @ V = –10V This P-Channel Logic Level MOSF ..
FDN357N ,N-Channel Logic Level Enhancement Mode Field Effect TransistorGeneral Description
FDN358 ,P-Channel Logic Level Enhancement Mode Field Effect TransistorElectrical Characteristics (T = 25 C unless otherwise noted )ASymbol Parameter Conditions Min Typ M ..
FPF2106 ,IntelliMAX Advanced Load Management ProductsFPF2100-FPF2107 IntelliMAX™ Advanced Load Management ProductsMay 2005FPF2100-FPF2107 IntelliMAX™ A ..
FPF2108 ,IntelliMAX ?Advanced Load Management ProductsGeneral Description 1.8 to 5.5V Input Voltage Range The FPF2108-FPF2110 is a series of load switch ..
FPF2109 ,Full Function Load Switch with Reverse Current BlockingGeneral Description 1.8 to 5.5V Input Voltage Range The FPF2108-FPF2110 is a series of load switch ..
FPF2110 ,Full Function Load Switch with Reverse Current BlockingGeneral Description 1.8 to 5.5V Input Voltage Range The FPF2108-FPF2110 is a series of load switch ..
FPF2123 ,IntelliMAX Advanced Load Management ProductsApplications if the constant current condition still persists after 10ms, theseparts will shut off ..
FPF2124 ,IntelliMAX Advanced Load Management ProductsBlock Diagram VINUVLO REVERSECONTROL ON CURRENTLOGIC BLOCKINGCURRENT LIMITVTHERMAL OUTSHUTDOW ..
FDN340
Single P-Channel/ Logic Level/ PowerTrench MOSFET
FDN340P December 1999 FDN340P Ò Ò Single P-Channel, Logic Level, PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced –2 A, 20 V. R = 0.07 W @ V = –4.5 V DS(ON) GS using Fairchild Semiconductor advanced Power Trench R = 0.11 W @ V = –2.5 V. DS(ON) GS process that has been especially tailored to minimize R = 0.210 W @ V = –1.8 V. DS(ON) GS the on-state resistance and yet maintain low gate charge for superior switching performance. · Low gate charge (8nC typical). These devices are well suited for portable electronics applications: Load switching and power management, · High performance trench technology for extremely battery charging circuits, and DC/DC conversion. low R . DS(ON) · High power version of industry Standard SOT-23 package. Identical pin-out to SOT-23 with 30% higher power handling capability. D D TM S SuperSOT -3 G G S o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage –20 V DSS VGSS Gate-Source Voltage ±8 V I Drain Current – Continuous (Note 1a) –2 A D – Pulsed –10 Power Dissipation for Single Operation (Note 1a) 0.5 PD W (Note 1b) 0.46 T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1a) 250 °C/W qJA °C/W R Thermal Resistance, Junction-to-Case (Note 1) 75 qJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 340 FDN340P 7’’ 8mm 3000 units Ó1999 FDN340P Rev C (W) 340
