FDN304P_NL ,P-Channel 1.8V Specified PowerTrench MOSFETApplications• High performance trench technology for extremely• Battery managementlow RDS(ON)• Load ..
FDN304PZ ,P-Channel 1.8V Specified PowerTrench MOSFETFeatures This P-Channel 1.8V specified MOSFET uses • –2.4 A, –20 V. R = 52 mΩ @ V = –4.5 V DS(ON) ..
FDN306P ,P-Channel 1.8V Specified PowerTrench MOSFETFeatures This P-Channel 1.8V specified MOSFET uses • –2.6 A, –12 V. R = 40 mΩ @ V = –4.5 V DS(ON) ..
FDN308P ,P-Channel 2.5V Specified PowerTrench MOSFETFeatures This P-Channel 2.5V specified MOSFET uses a rugged • –20 V, –1.5 A. R = 125 mΩ @ V = –4.5 ..
FDN327N ,N-Channel 1.8 Vgs Specified PowerTrench MOSFETGeneral Description MOSFETPowerTrenchN-Channel 1.8 October 2001FDN327N
FDN335 ,N-Channel 2.5V Specified PowerTrenchTM MOSFETApplications• High power and current handling capability.• DC/DC converter• Load switchD DSGSTMGSup ..
FPBL30SL60 ,Smart Power Module (SPM)FeaturesFPBL30SL60 is an advanced smart power module (SPM) • UL Certified No. E209204that Fairchi ..
FPD1500SOT89 , LOW NOISE, HIGH LINEARITY PACKAGED PHEMTT
FPD1500SOT89 , LOW NOISE, HIGH LINEARITY PACKAGED PHEMTT
FPD2250SOT89E , LOW NOISE HIGH LINEARITY PACKAGED PHEMT
FPD2250SOT89E , LOW NOISE HIGH LINEARITY PACKAGED PHEMT
FPD3000 , 2W POWER PHEMT
FDN304P_NL
P-Channel 1.8V Specified PowerTrench MOSFET
FDN304P January 2001 FDN304P P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses • –2.4 A, –20 V. R = 52 mΩ @ V = –4.5 V DS(ON) GS Fairchild’s advanced low voltage PowerTrench process. R = 70 mΩ @ V = –2.5 V DS(ON) GS It has been optimized for battery power management applications. R = 100 mΩ @ V = –1.8 V DS(ON) GS • Fast switching speed Applications • High performance trench technology for extremely • Battery management low R DS(ON) • Load switch TM • Battery protection • SuperSOT -3 provides low R and 30% higher DS(ON) power handling capability than SOT23 in the same footprint D D S G S TM G SuperSOT -3 o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage –20 V DSS V Gate-Source Voltage ±8 V GSS I Drain Current – Continuous (Note 1a) –2.4 A D – Pulsed –10 P Maximum Power Dissipation (Note 1a) 0.5 W D (Note 1b) 0.46 T , T Operating and Storage Junction Temperature Range –55 to +150 J STG °C Thermal Characteristics Thermal Resistance, Junction-to-Ambient (Note 1a) 250 R °C/W θJA Thermal Resistance, Junction-to-Case (Note 1) 75 R °C/W θJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 304 FDN304P 7’’ 8mm 3000 units 2001 FDN304P Rev C(W)
