FDMS9600S ,30V Dual N-Channel PowerTrench?MOSFETGeneral DescriptionQ1: N-ChannelThis device includes two specialized MOSFETs in a unique dual Power ..
FDMS9620S ,30V Dual N-Channel PowerTrench?MOSFETGeneral Description Max r = 21.5mΩ at V = 10V, I = 7.5ADS(on) GS DThis device includes two special ..
FDN302 ,P-Channel 2.5V Specified PowerTrench MOSFETApplicationslow RDS(ON)• Power managementTM• SuperSOT -3 provides low R and 30% higherDS(ON)• Load ..
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FDN304P ,P-Channel 1.8V Specified PowerTrench MOSFETFeaturesThis P-Channel 1.8V specified MOSFET uses• –2.4 A, –20 V. R = 52 mΩ @ V = –4.5 VDS(ON) GSF ..
FDN304P_NL ,P-Channel 1.8V Specified PowerTrench MOSFETApplications• High performance trench technology for extremely• Battery managementlow RDS(ON)• Load ..
FPAB30BH60B ,PFC SPM?3 Series Ver.2 for 1-Phase Boost PFCApplications such as Air Conditioners. It CombinesIC for Gate Driving and Protection Optimized Circ ..
FPAB30PH60 ,Smart Power Module for Front-End RectifierFeaturesFPAB30PH60 is an advanced smart power module of • Low thermal resistance due to Al O -DBC ..
FPAL20SL60 ,Smart Power Module (SPM)FeaturesFPAL20SL60 is an advanced smart power module (SPM) • UL Certified No. E209204that Fairchi ..
FPBL10SH60 ,Smart Power Module (SPM)FeaturesFPBL10SH60 is an advanced smart power module (SPM) • UL Certified No. E209204that Fairchi ..
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FPD1500SOT89 , LOW NOISE, HIGH LINEARITY PACKAGED PHEMTT
FDMS9600S
30V Dual N-Channel PowerTrench?MOSFET
® FDMS9600S Dual N-Channel PowerTrench MOSFET September 2008 FDMS9600S tm ® Dual N-Channel PowerTrench MOSFET Q1: 30V, 32A, 8.5mΩ Q2: 30V, 30A, 5.5mΩ Features General Description Q1: N-Channel This device includes two specialized MOSFETs in a unique dual Power 56 package. It is designed to provide an optimal Max r = 8.5mΩ at V = 10V, I = 12A DS(on) GS D Synchronous Buck power stage in terms of efficiency and PCB Max r = 12.4mΩ at V = 4.5V, I = 10A DS(on) GS D utilization. The low switching loss "High Side" MOSFET is com- Q2: N-Channel plemented by a Low Conduction Loss "Low Side" SyncFET. Max r = 5.5mΩ at V = 10V, I = 16A DS(on) GS D Applications Max r = 7.0mΩ at V = 4.5V, I = 14A DS(on) GS D Synchronous Buck Converter for: Low Qg high side MOSFET Notebook System Power Low r low side MOSFET DS(on) Thermally efficient dual Power 56 package General Purpose Point of Load Pinout optimized for simple PCB design RoHS Compliant G1 G1 D1 D1 Q2 D1 D1 5 4 D1 D1 D1 D1 6 3 S1 S1/ /D D2 2 G2 G2 7 2 S2 S2 S2 S2 8 1 Q 1 S2 S2 Power 56 MOSFET Maximum Ratings T = 25°C unless otherwise noted A Symbol Parameter Q1 Q2 Units V Drain to Source Voltage 30 30 V DS V Gate to Source Voltage ±20 ±20 V GS Drain Current -Continuous (Package limited) T = 25°C 32 30 C -Continuous (Silicon limited) T = 25°C 55 108 C I A D -Continuous T = 25°C (Note 1a) 12 16 A -Pulsed 60 60 Power Dissipation for Single Operation (Note 1a) 2.5 P W D (Note 1b) 1.0 T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction to Ambient (Note 1a) 50 θJA R Thermal Resistance, Junction to Ambient (Note 1b) 120 °C/W θJA R Thermal Resistance, Junction to Case 3 1.2 θJC Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDMS9600S FDMS9600S Power 56 13” 12mm 3000 units 1 ©2008 FDMS9600S Rev.D1
