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FDMS8670ASFAIRCHILN/a49avaiFDMS8670AS N-Channel PowerTrench® SyncFETTM 30V, 42A, 3.0mOhms


FDMS8670AS ,FDMS8670AS N-Channel PowerTrench® SyncFETTM 30V, 42A, 3.0mOhmsGeneral Description„ Max r = 3.0m: at V = 10V, I = 23A The FDMS8670AS has been designed to minimize ..
FDMS8670S General DescriptionThe FDMS8670S has been designed to minimize losses in „ Max r = 3.5m: at V = 10V ..
FDMS8672AS Applications„ MSL1 robust package design„ Synchronous Rectifier for DC/DC Converters„ RoHS Complian ..
FDMS8672S General DescriptionThe FDMS8672S has been designed to minimize losses in „ Max r = 5.0m: at V = 10V ..
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FDMS8680 ,30V N-Channel PowerTrench?MOSFETGeneral Description„ Max r = 7.0m at V = 10V, I = 14A The FDMS8680 has been designed to minimize lo ..
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FP7G150US60 ,Transfer Molded Type IGBT ModuleFeatures• Short Circuit rated 10us @Tc=100C, Vge=15V• High Speed Switching• Low Saturation Voltage ..
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FDMS8670AS
FDMS8670AS N-Channel PowerTrench® SyncFETTM 30V, 42A, 3.0mOhms
® TM FDMS8670AS N-Channel PowerTrench SyncFET May 2009 FDMS8670AS tm ® TM N-Channel PowerTrench SyncFET  30V, 42A, 3.0m: Features General Description „ Max r = 3.0m: at V = 10V, I = 23A The FDMS8670AS has been designed to minimize losses in DS(on) GS D power conversion application. Advancements in both silicon and „ Max r = 4.7m: at V = 4.5V, I = 18A DS(on) GS D package technologies have been combined to offer the lowest „ Advanced Package and Silicon combination r while maintaining excellent switching performance. This DS(on) device has the added benefit of an efficient monolithic Schottky for low r and high efficiency DS(on) body diode. „ SyncFET Schottky Body Diode Applications „ MSL1 robust package design „ Synchronous Rectifier for DC/DC Converters „ RoHS Compliant „ Notebook Vcore/ GPU low side switch „ Networking Point of Load low side switch „ Telecom secondary side rectification Top Bottom Pin 1 S D 5 4 G S S G D 6 3 S D 7 2 S D D D D 8 1 S D Power 56 MOSFET Maximum Ratings T = 25°C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 30 V DS V Gate to Source Voltage ±20 V GS Drain Current -Continuous (Package limited) T = 25°C 42 C -Continuous (Silicon limited) T = 25°C 127 C I A D -Continuous T = 25°C (Note 1a) 23 A -Pulsed 200 E Single Pulse Avalanche Energy 384 mJ AS Power Dissipation T = 25°C 78 C P W D Power Dissipation T = 25°C (Note 1a) 2.5 A T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction to Case 1.6 TJC °C/W R Thermal Resistance, Junction to Ambient (Note 1a) 50 TJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDMS8670AS FDMS8670AS Power 56 13’’ 12mm 3000units 1 ©2009 FDMS8670AS Rev.C2
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