FDMS8027S Applications MSL1 robust package design Synchronous Rectifier for DC/DC Converters 100% UIL test ..
FDMS8460 ,40V N-Channel Power Trench?MOSFETGeneral Description Max r = 2.2m: at V = 10V, I = 25A This N-Channel MOSFET is produced using ..
FDMS86101 ,100V N-Channel PowerTrench?MOSFETGeneral DescriptionThis N-Channel MOSFET is produced using Fairchild Max r = 8 mΩ at V = 10 V ..
FDMS86101 ,100V N-Channel PowerTrench?MOSFETGeneral DescriptionThis N-Channel MOSFET is produced using Fairchild Max r = 8 mΩ at V = 10 V ..
FDMS86200 ,150V N-Channel Power Trench?MOSFETGeneral Description Max r = 18 mΩ at V = 10 V, I = 9.6 A This N-Channel MOSFET is produced us ..
FDMS86300 ,80V N-Channel PowerTrench?MOSFETApplications MSL1 robust package design OringFET / Load Switching 100% UIL tested DC-DC Convers ..
FP75R12KE3 , Elektrische Eigenschaften / Electrical properties
FP75R12KT3 , EconoPIM3 module with fast trench/fieldstop IGBT3 and EmCon High Efficiency diode
FP75R12KT4 , EconoPIM3 module with trench/fieldstop IGBT4 and EmCon4 diode
FP75R12KT4_B15 , EconoPIM™3 module with trench/fieldstop IGBT4 and Emitter Controlled 4 diode
FP7G150US60 ,Transfer Molded Type IGBT ModuleFeatures• Short Circuit rated 10us @Tc=100C, Vge=15V• High Speed Switching• Low Saturation Voltage ..
FP7G50US60 ,Transfer Molded Type IGBT ModuleFeatures• Short Circuit rated 10us @Tc=100°C, Vge=15V• High Speed Switching• Low Saturation Voltage ..
FDMS8027S
® TM FDMS8027S N-Channel PowerTrench SyncFET August 2010 FDMS8027S ® TM N-Channel PowerTrench SyncFET 30 V, 22 A, 5.0 mΩ Features General Description The FDMS8027S has been designed to minimize losses in Max r = 5.0 mΩ at V = 10 V, I = 18 A DS(on) GS D power conversion application. Advancements in both silicon and Max r = 6.2 mΩ at V = 4.5 V, I = 16 A DS(on) GS D package technologies have been combined to offer the lowest r while maintaining excellent switching performance.This DS(on) Advanced Package and Silicon combination for low r DS(on) device has the added benefit of an efficient monolithic Schottky and high efficiency body diode. SyncFET Schottky Body Diode Applications MSL1 robust package design Synchronous Rectifier for DC/DC Converters 100% UIL tested Notebook Vcore/GPU low side switch RoHS Compliant Networking Point of Load low side switch Telecom secondary side rectification Bottom Top Pin 1 D G S 5 4 S S D G 6 3 S D 7 2 S D S D 8 1 D D D Power 56 MOSFET Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter Ratings Units V Drain to Source Voltage 30 V DS V Gate to Source Voltage (Note 4) ±20 V GS Drain Current -Continuous (Package limited) T = 25°C 22 C -Continuous (Silicon limited) T = 25°C 70 C I A D -Continuous T = 25°C (Note 1a) 18 A -Pulsed 100 E Single Pulse Avalanche Energy (Note 3) 33 mJ AS Power Dissipation T = 25°C 36 C P W D Power Dissipation T = 25°C (Note 1a) 2.5 A T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction to Case 3.4 θJC °C/W R Thermal Resistance, Junction to Ambient (Note 1a) 50 θJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDMS8027S FDMS8027S Power 56 13 ’’ 12 mm 3000 units ©2010 1 FDMS8027S Rev.C1
