FDMS7658AS Applications MSL1 robust package design 100% UIL tested Synchronous Rectifier for DC/DC Convert ..
FDMS7660 ,30V N-Channel PowerTrench?MOSFETGeneral DescriptionThis N-Channel MOSFET has been designed specifically to Max r = 2.8 mΩ at V = ..
FDMS7660AS Applications MSL1 robust package design 100% UIL tested Synchronous Rectifier for DC/DC Converte ..
FDMS7670 ,30V N-Channel PowerTrench?MOSFETapplications IMVP Vcore Switching for Notebook MSL1 robust package design VRM Vcore Switching fo ..
FDMS7670 ,30V N-Channel PowerTrench?MOSFET®FDMS7670 N-Channel PowerTrench MOSFETJuly 2012FDMS7670 ..
FDMS7670 ,30V N-Channel PowerTrench?MOSFETApplicationsminimum EMI in sync buck converter
FP75R12KE3 , Elektrische Eigenschaften / Electrical properties
FP75R12KT3 , EconoPIM3 module with fast trench/fieldstop IGBT3 and EmCon High Efficiency diode
FP75R12KT4 , EconoPIM3 module with trench/fieldstop IGBT4 and EmCon4 diode
FP75R12KT4_B15 , EconoPIM™3 module with trench/fieldstop IGBT4 and Emitter Controlled 4 diode
FP7G150US60 ,Transfer Molded Type IGBT ModuleFeatures• Short Circuit rated 10us @Tc=100C, Vge=15V• High Speed Switching• Low Saturation Voltage ..
FP7G50US60 ,Transfer Molded Type IGBT ModuleFeatures• Short Circuit rated 10us @Tc=100°C, Vge=15V• High Speed Switching• Low Saturation Voltage ..
FDMS7658AS
® TM FDMS7658AS N-Channel PowerTrench SyncFET May 2013 FDMS7658AS ® TM N-Channel PowerTrench SyncFET � 30 V, 70 A, 1.9 m� Features General Description The FDMS7658AS has been designed to minimize losses in � Max r = 1.9 m� at V = 10 V, I = 28 A DS(on) GS D power conversion application. Advancements in both silicon and � Max r = 2.2 m� at V = 7 V, I = 26 A DS(on) GS D package technologies have been combined to offer the lowest r while maintaining excellent switching performance. This � Advanced Package and Silicon combination for low r DS(on) DS(on) device has the added benefit of an efficient monolithic Schottky and high efficiency body diode. � SyncFET Schottky Body Diode Applications � MSL1 robust package design � 100% UIL tested � Synchronous Rectifier for DC/DC Converters � RoHS Compliant � Notebook Vcore/ GPU low side switch � Networking Point of Load low side switch � Telecom secondary side rectification Bottom Top Pin 1 S S S G D D D D Power 56 MOSFET Maximum Ratings T = 25 °C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 30 V DS V Gate to Source Voltage (Note 4) ±20 V GS Drain Current -Continuous T = 25 °C 70 C I -Continuous T = 25 °C (Note 1a) 29 A D A -Pulsed 150 dv/dt MOSFET dv/dt 1.5 V/ns E Single Pulse Avalanche Energy (Note 3) 162 mJ AS Power Dissipation T = 25 °C 89 C P W D Power Dissipation T = 25 °C (Note 1a) 2.5 A T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction to Case 1.4 �JC °C/W R Thermal Resistance, Junction to Ambient (Note 1a) 50 �JA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDMS7658AS FDMS7658AS Power 56 13 ’’ 12 mm 3000 units 1 ©2012 FDMS7658AS Rev.C3
