IC Phoenix
 
Home ›  FF8 > FDMS7600AS,30V Dual N-Channel PowerTrench?MOSFET
FDMS7600AS Fast Delivery,Good Price
Part Number:
If you need More Quantity or Better Price,Welcom Any inquiry.
We available via phone +865332716050 Email
Partno Mfg Dc Qty AvailableDescript
FDMS7600ASFairchilN/a3720avai30V Dual N-Channel PowerTrench?MOSFET


FDMS7600AS ,30V Dual N-Channel PowerTrench?MOSFETElectrical Characteristics T = 25 °C unless otherwise notedJSymbol Parameter Test Conditions Type M ..
FDMS7602S ,30V Dual N-Channel PowerTrench?MOSFETElectrical Characteristics T = 25 °C unless otherwise notedJSymbol Parameter Test Conditions Type M ..
FDMS7608S ,30V Dual N-Channel PowerTrench?MOSFETElectrical Characteristics T = 25°C unless otherwise notedJSymbol Parameter Test Conditions Type Mi ..
FDMS7650 ,30V N-Channel PowerTrench?MOSFETApplications„ 100% UIL tested„ OringFET„ RoHS Compliant „ Synchronous rectifierD DDD GD 5 4D 6 3 S ..
FDMS7650 ,30V N-Channel PowerTrench?MOSFETGeneral DescriptionThis N-Channel MOSFET has been designed specifically to „ Max r = 0.99 mΩ at V ..
FDMS7658AS Applications MSL1 robust package design 100% UIL tested  Synchronous Rectifier for DC/DC Convert ..
FP75R12KE3 , Elektrische Eigenschaften / Electrical properties
FP75R12KT3 , EconoPIM3 module with fast trench/fieldstop IGBT3 and EmCon High Efficiency diode
FP75R12KT4 , EconoPIM3 module with trench/fieldstop IGBT4 and EmCon4 diode
FP75R12KT4_B15 , EconoPIM™3 module with trench/fieldstop IGBT4 and Emitter Controlled 4 diode
FP7G150US60 ,Transfer Molded Type IGBT ModuleFeatures• Short Circuit rated 10us @Tc=100C, Vge=15V• High Speed Switching• Low Saturation Voltage ..
FP7G50US60 ,Transfer Molded Type IGBT ModuleFeatures• Short Circuit rated 10us @Tc=100°C, Vge=15V• High Speed Switching• Low Saturation Voltage ..


FDMS7600AS
30V Dual N-Channel PowerTrench?MOSFET
® FDMS7600AS Dual N-Channel PowerTrench MOSFET December 2009 FDMS7600AS ® Dual N-Channel PowerTrench MOSFET N-Channel: 30 V, 30 A, 7.5 mΩ N-Channel: 30 V, 40 A, 2.8 mΩ Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a dual MLP package.The switch node has been internally „ Max r = 7.5 mΩ at V = 10 V, I = 12 A DS(on) GS D connected to enable easy placement and routing of synchronous „ Max r = 12 mΩ at V = 4.5 V, I = 10 A DS(on) GS D buck converters. The control MOSFET (Q1) and synchronous Q2: N-Channel SyncFET (Q2) have been designed to provide optimal power „ Max r = 2.8 mΩ at V = 10 V, I = 20 A DS(on) GS D efficiency. „ Max r = 3.3 mΩ at V = 4.5 V, I = 18 A DS(on) GS D Applications „ RoHS Compliant „ Computing „ Communications „ General Purpose Point of Load „ Notebook V CORE S2 S2 Q 2 S2 S2 D1 5 4 G2 S1/D2 D1 S2 6 3 D1 D1 S2 D1 7 2 D1 D1 G1 G2 G1 8 1 Q 1 Top Bottom Power 56 MOSFET Maximum Ratings T = 25 °C unless otherwise noted A Symbol Parameter Q1 Q2 Units V Drain to Source Voltage 30 30 V DS V Gate to Source Voltage (Note 3) ±20 ±20 V GS Drain Current -Continuous (Package limited) T = 25 °C 30 40 C -Continuous (Silicon limited) T = 25 °C 50 120 C I A D 1a 1b -Continuous T = 25 °C 12 22 A -Pulsed 40 60 1a 1b Power Dissipation for Single Operation T = 25 °C 2.2 2.5 A P W D 1c 1d T = 25 °C 1.0 1.0 A T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG Thermal Characteristics 1a 1b R Thermal Resistance, Junction to Ambient 57 50 θJA 1c 1d R Thermal Resistance, Junction to Ambient 125 120 °C/W θJA R Thermal Resistance, Junction to Case 3.5 2 θJC Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDMS7600AS FDMS7600AS Power 56 13 ” 12 mm 3000 units 1 ©2009 FDMS7600AS Rev.C
ic,good price


TEL:86-533-2716050      FAX:86-533-2716790
   

©2020 IC PHOENIX CO.,LIMITED