FDMS7558S Applications MSL1 robust package design Synchronous Rectifier for Synchronous Buck Converters 10 ..
FDMS7600AS ,30V Dual N-Channel PowerTrench?MOSFETElectrical Characteristics T = 25 °C unless otherwise notedJSymbol Parameter Test Conditions Type M ..
FDMS7602S ,30V Dual N-Channel PowerTrench?MOSFETElectrical Characteristics T = 25 °C unless otherwise notedJSymbol Parameter Test Conditions Type M ..
FDMS7608S ,30V Dual N-Channel PowerTrench?MOSFETElectrical Characteristics T = 25°C unless otherwise notedJSymbol Parameter Test Conditions Type Mi ..
FDMS7650 ,30V N-Channel PowerTrench?MOSFETApplications 100% UIL tested OringFET RoHS Compliant Synchronous rectifierD DDD GD 5 4D 6 3 S ..
FDMS7650 ,30V N-Channel PowerTrench?MOSFETGeneral DescriptionThis N-Channel MOSFET has been designed specifically to Max r = 0.99 mΩ at V ..
FP75R12KE3 , Elektrische Eigenschaften / Electrical properties
FP75R12KT3 , EconoPIM3 module with fast trench/fieldstop IGBT3 and EmCon High Efficiency diode
FP75R12KT4 , EconoPIM3 module with trench/fieldstop IGBT4 and EmCon4 diode
FP75R12KT4_B15 , EconoPIM™3 module with trench/fieldstop IGBT4 and Emitter Controlled 4 diode
FP7G150US60 ,Transfer Molded Type IGBT ModuleFeatures• Short Circuit rated 10us @Tc=100C, Vge=15V• High Speed Switching• Low Saturation Voltage ..
FP7G50US60 ,Transfer Molded Type IGBT ModuleFeatures• Short Circuit rated 10us @Tc=100°C, Vge=15V• High Speed Switching• Low Saturation Voltage ..
FDMS7558S
® FDMS7558S N-Channel PowerTrench SyncFET December 2009 FDMS7558S ® TM N-Channel PowerTrench SyncFET 25 V, 49 A, 1.25 mΩ Features General Description The FDMS7558S has been designed to minimize losses in Max r = 1.25 mΩ at V = 10 V, I = 32 A DS(on) GS D power conversion application. Advancements in both silicon and Max r = 1.75 mΩ at V = 4.5 V, I = 28 A DS(on) GS D package technologies have been combined to offer the lowest r while maintaining excellent switching performance. This DS(on) Advanced Package and Silicon combination for low r DS(on) device has the added benefit of an efficient monolithic Schottky and high efficiency body diode. SyncFET Schottky Body Diode Applications MSL1 robust package design Synchronous Rectifier for Synchronous Buck Converters 100% UIL tested Notebook RoHS Compliant Server Telecom High Efficiency DC-DC Switch Mode Power Supplies Bottom Top Pin 1 D 5 4 G S S S D G 6 3 S D S 7 2 D S D 8 1 D D D Power 56 MOSFET Maximum Ratings T = 25 °C unless otherwise noted C Symbol Parameter Ratings Units V Drain to Source Voltage 25 V DS V Gate to Source Voltage (Note 4) ±20 V GS Drain Current -Continuous (Package limited) T = 25 °C 49 C -Continuous (Silicon limited) T = 25 °C 199 C I A D -Continuous T = 25 °C (Note 1a) 32 A -Pulsed 180 E Single Pulse Avalanche Energy (Note 3) 288 mJ AS Power Dissipation T = 25 °C 89 C P W D Power Dissipation T = 25 °C (Note 1a) 2.5 A T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction to Case 1.4 θJC °C/W R Thermal Resistance, Junction to Ambient (Note 1a) 50 θJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDMS7558S FDMS7558S Power 56 13 ’’ 12 mm 3000 units ©2009 1 FDMS7558S Rev.C
