FDMS3662 ,100V N-Channel PowerTrench?MOSFETGeneral Description Max r = 14.8m: at V = 10V, I = 8.9A This N-Channel MOSFET is produced usin ..
FDMS3672 ,100V N-Channel UltraFET Trench MOSFETapplications. Max r = 29mΩ at V = 6V, I = 6.6ADS(on) GS DOptimized for r , low ESR, low total and ..
FDMS3672 ,100V N-Channel UltraFET Trench MOSFETGeneral Description Max r = 23mΩ at V = 10V, I = 7.4AUItraFET devices combine characteristics that ..
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FDMS5672 ,60V N-Channel UltraFET Trench MOSFETapplications. Max r = 16.5mΩ at V = 6V, I = 8ADS(on) GS DOptimized for r , low ESR, low total and ..
FP75R12KE3 , Elektrische Eigenschaften / Electrical properties
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FP7G150US60 ,Transfer Molded Type IGBT ModuleFeatures• Short Circuit rated 10us @Tc=100C, Vge=15V• High Speed Switching• Low Saturation Voltage ..
FP7G50US60 ,Transfer Molded Type IGBT ModuleFeatures• Short Circuit rated 10us @Tc=100°C, Vge=15V• High Speed Switching• Low Saturation Voltage ..
FDMS3662
100V N-Channel PowerTrench?MOSFET
® FDMS3662 N-Channel Power Trench MOSFET May 2009 FDMS3662 tm ® N-Channel Power Trench MOSFET 100V, 49A, 14.8m: Features General Description Max r = 14.8m: at V = 10V, I = 8.9A This N-Channel MOSFET is produced using Fairchild DS(on) GS D ® Semiconductor‘s advanced Power Trench process that has Advanced Package and Silicon combination for low r DS(on) been especially tailored to minimize the on-state resistance and MSL1 robust package design yet maintain superior switching performance. 100% UIL Tested RoHS Compliant Application DC - DC Conversion Top Bottom Pin 1 S G 5 4 D S S G D 6 3 S D 7 2 S D D 8 1 D S D D Power 56 MOSFET Maximum Ratings T = 25°C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 100 V DS V Gate to Source Voltage ±20 V GS Drain Current -Continuous (Package limited) T = 25°C 49 C -Continuous (Silicon limited) T = 25°C 57 C I A D -Continuous T = 25°C (Note 1a) 8.9 A -Pulsed 90 E Single Pulse Avalanche Energy (Note 3) 384 mJ AS Power Dissipation T = 25°C 104 C P W D Power Dissipation T = 25°C (Note 1a) 2.5 A T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction to Case 1.2 TJC °C/W R Thermal Resistance, Junction to Ambient (Note 1a) 50 TJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDMS3662 FDMS3662 Power 56 13’’ 12mm 3000 units 1 ©2009 FDMS3662 Rev.C1
