FDMS3602AS ,PowerTrench?Power Stage Asymmetric Dual N-Channel MOSFETElectrical Characteristics T = 25°C unless otherwise notedJSymbol Parameter Test Conditions Type Mi ..
FDMS3604AS ,30V Dual N-Channel PowerTrench?MOSFETElectrical Characteristics T = 25 °C unless otherwise notedJSymbol Parameter Test Conditions Type M ..
FDMS3604S ,PowerTrench?Power StageElectrical Characteristics T = 25 °C unless otherwise notedJSymbol Parameter Test Conditions Type M ..
FDMS3606AS ,30V Asymmetric Dual N-Channel MOSFET, PowerTrench?Power StageElectrical Characteristics T = 25 °C unless otherwise notedJSymbol Parameter Test Conditions Type M ..
FDMS3660S ,30V Asymmetric Dual N-Channel MOSFET PowerTrench?Power StageElectrical Characteristics T = 25 °C unless otherwise notedJSymbol Parameter Test Conditions Type M ..
FDMS3660S ,30V Asymmetric Dual N-Channel MOSFET PowerTrench?Power StageApplications Low inductance packaging shortens rise/fall times, resulting in lower switching losse ..
FP75R12KE3 , Elektrische Eigenschaften / Electrical properties
FP75R12KT3 , EconoPIM3 module with fast trench/fieldstop IGBT3 and EmCon High Efficiency diode
FP75R12KT4 , EconoPIM3 module with trench/fieldstop IGBT4 and EmCon4 diode
FP75R12KT4_B15 , EconoPIM™3 module with trench/fieldstop IGBT4 and Emitter Controlled 4 diode
FP7G150US60 ,Transfer Molded Type IGBT ModuleFeatures• Short Circuit rated 10us @Tc=100C, Vge=15V• High Speed Switching• Low Saturation Voltage ..
FP7G50US60 ,Transfer Molded Type IGBT ModuleFeatures• Short Circuit rated 10us @Tc=100°C, Vge=15V• High Speed Switching• Low Saturation Voltage ..
FDMS3602AS
PowerTrench?Power Stage Asymmetric Dual N-Channel MOSFET
® FDMS3602AS PowerTrench Power Stage March 2011 FDMS3602AS ® PowerTrench Power Stage Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a Max r = 5.6 mΩ at V = 10 V, I = 15 A dual PQFN package. The switch node has been internally DS(on) GS D connected to enable easy placement and routing of synchronous Max r = 8.5 mΩ at V = 4.5 V, I = 14 A DS(on) GS D buck converters. The control MOSFET (Q1) and synchronous Q2: N-Channel SyncFET (Q2) have been designed to provide optimal power Max r = 2.2 mΩ at V = 10 V, I = 26 A DS(on) GS D efficiency. Max r = 3.4 mΩ at V = 4.5 V, I = 22 A DS(on) GS D Applications Low inductance packaging shortens rise/fall times, resulting in lower switching losses Computing MOSFET integration enables optimum layout for lower circuit Communications inductance and reduced switch node ringing General Purpose Point of Load RoHS Compliant Notebook VCORE G1 Pin 1 D1 D1 D1 Q 2 S2 D1 D1 5 4 PHASE PHASE D1 S2 6 3 (S1/D2) S2 D1 7 2 G2 S2 G2 S2 G1 8 1 S2 Q 1 Top Bottom Power 56 MOSFET Maximum Ratings T = 25°C unless otherwise noted A Symbol Parameter Q1 Q2 Units V Drain to Source Voltage 25 25 V DS V Gate to Source Voltage (Note 3) ±20 ±20 V GS Drain Current -Continuous (Package limited) T = 25 °C 30 40 C -Continuous (Silicon limited) T = 25 °C 65 135 C I A D 1a 1b -Continuous T = 25 °C 15 26 A -Pulsed 40 100 4 5 E Single Pulse Avalanche Energy 50 144 mJ AS 1a 1b Power Dissipation for Single Operation T = 25°C 2.2 2.5 A P W D 1c 1d Power Dissipation for Single Operation T = 25°C 1.0 1.0 A T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG Thermal Characteristics 1a 1b R Thermal Resistance, Junction to Ambient 57 50 θJA 1c 1d R Thermal Resistance, Junction to Ambient 125 120 °C/W θJA R Thermal Resistance, Junction to Case 3.5 2 θJC Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity 22OA FDMS3602AS Power 56 13” 12 mm 3000 units N7OC ©2011 1 FDMS3602AS Rev.C4
