Partno |
Mfg |
Dc |
Qty |
Available | Descript |
FDMS2380ES |
FAIRCHILD|Fairchild Semiconductor |
N/a |
2518 |
|
|
FDMS2572 ,150V N-Channel UltraFET Trench MOSFETGeneral Description Max r = 47mΩ at V = 10V, I = 4.5AUItraFET devices combine characteristics that ..
FDMS2672 ,200V N-Channel UltraFET Trench?MOSFETGeneral Description Max r = 77m at V = 10V, I = 3.7AUItraFET devices combine characteristics that ..
FDMS2734 ,250V N-Channel UltraFET Trench MOSFETapplications. Max r = 130m at V = 6V, I = 1.7ADS(on) GS DOptimized for r , low ESR, low total ..
FDMS3500 ,75V N-Channel PowerTrench?MOSFETGeneral Description Max r = 14.5m: at V = 10V, I = 11.5A This N-Channel MOSFET is produced usi ..
FDMS3572 ,80V N-Channel UltraFET Trench MOSFETGeneral Description Max r = 16.5mΩ at V = 10V, I = 8.8AUItraFET devices combine characteristics th ..
FP75R12KE3 , Elektrische Eigenschaften / Electrical properties
FP75R12KT3 , EconoPIM3 module with fast trench/fieldstop IGBT3 and EmCon High Efficiency diode
FP75R12KT4 , EconoPIM3 module with trench/fieldstop IGBT4 and EmCon4 diode