FDMS0312S General DescriptionThe FDMS0312S has been designed to minimize losses in Max r = 4.9 m: at V = 10 ..
FDMS0312S Applications MSL1 robust package design 100% UIL tested Synchronous Rectifier for DC/DC Converte ..
FDMS2572 ,150V N-Channel UltraFET Trench MOSFETGeneral Description Max r = 47mΩ at V = 10V, I = 4.5AUItraFET devices combine characteristics that ..
FDMS2672 ,200V N-Channel UltraFET Trench?MOSFETGeneral Description Max r = 77m at V = 10V, I = 3.7AUItraFET devices combine characteristics that ..
FDMS2734 ,250V N-Channel UltraFET Trench MOSFETapplications. Max r = 130m at V = 6V, I = 1.7ADS(on) GS DOptimized for r , low ESR, low total ..
FDMS3500 ,75V N-Channel PowerTrench?MOSFETGeneral Description Max r = 14.5m: at V = 10V, I = 11.5A This N-Channel MOSFET is produced usi ..
FP75R12KE3 , Elektrische Eigenschaften / Electrical properties
FP75R12KT3 , EconoPIM3 module with fast trench/fieldstop IGBT3 and EmCon High Efficiency diode
FP75R12KT4 , EconoPIM3 module with trench/fieldstop IGBT4 and EmCon4 diode
FP75R12KT4_B15 , EconoPIM™3 module with trench/fieldstop IGBT4 and Emitter Controlled 4 diode
FP7G150US60 ,Transfer Molded Type IGBT ModuleFeatures• Short Circuit rated 10us @Tc=100C, Vge=15V• High Speed Switching• Low Saturation Voltage ..
FP7G50US60 ,Transfer Molded Type IGBT ModuleFeatures• Short Circuit rated 10us @Tc=100°C, Vge=15V• High Speed Switching• Low Saturation Voltage ..
FDMS0312S
® TM FDMS0312S N-Channel PowerTrench SyncFET July 2011 FDMS0312S ® TM N-Channel PowerTrench SyncFET 30 V, 42 A, 4.9 m: Features General Description The FDMS0312S has been designed to minimize losses in Max r = 4.9 m: at V = 10 V, I = 18 A DS(on) GS D power conversion application. Advancements in both silicon and Max r = 5.8 m: at V = 4.5 V, I = 14 A DS(on) GS D package technologies have been combined to offer the lowest r while maintaining excellent switching performance. This Advanced Package and Silicon combination for low r DS(on) DS(on) device has the added benefit of an efficient monolithic Schottky and high efficiency body diode. SyncFET Schottky Body Diode Applications MSL1 robust package design 100% UIL tested Synchronous Rectifier for DC/DC Converters RoHS Compliant Notebook Vcore/ GPU low side switch Networking Point of Load low side switch Desktop Bottom Top Pin 1 D G S 5 4 S S D G S 6 3 D S 7 2 D S D 8 1 D D D Power 56 MOSFET Maximum Ratings T = 25 °C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 30 V DS V Gate to Source Voltage (Note 4) ±20 V GS Drain Current -Continuous (Package limited) T = 25 °C 42 C -Continuous (Silicon limited) T = 25 °C 83 C I A D -Continuous T = 25 °C (Note 1a) 19 A -Pulsed 90 E Single Pulse Avalanche Energy (Note 3) 60 mJ AS Power Dissipation T = 25 °C 46 C P W D Power Dissipation T = 25 °C (Note 1a) 2.5 A T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction to Case 2.7 TJC °C/W R Thermal Resistance, Junction to Ambient (Note 1a) 50 TJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDMS0312S FDMS0312S Power 56 3 ’’ 12 mm 3000 units ©2011 1 FDMS0312S Rev.D
