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FDMS0312ASFAIRCHILDN/a1861avai


FDMS0312AS Applications„ MSL1 robust package design„ Synchronous Rectifier for DC/DC Converters„ 100% UIL test ..
FDMS0312S General DescriptionThe FDMS0312S has been designed to minimize losses in „ Max r = 4.9 m: at V = 10 ..
FDMS0312S Applications„ MSL1 robust package design„ 100% UIL tested„ Synchronous Rectifier for DC/DC Converte ..
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FP7G150US60 ,Transfer Molded Type IGBT ModuleFeatures• Short Circuit rated 10us @Tc=100C, Vge=15V• High Speed Switching• Low Saturation Voltage ..
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FDMS0312AS

® TM FDMS0312AS N-Channel PowerTrench SyncFET August 2010 FDMS0312AS ® TM N-Channel PowerTrench SyncFET 30 V, 22 A, 5.0 mΩ Features General Description The FDMS0312AS has been designed to minimize losses in „ Max r = 5.0 mΩ at V = 10 V, I = 18 A DS(on) GS D power conversion application. Advancements in both silicon and „ Max r = 6.2 mΩ at V = 4.5 V, I = 16 A DS(on) GS D package technologies have been combined to offer the lowest r while maintaining excellent switching performance.This DS(on) „ Advanced Package and Silicon combination for low r DS(on) device has the added benefit of an efficient monolithic Schottky and high efficiency body diode. „ SyncFET Schottky Body Diode Applications „ MSL1 robust package design „ Synchronous Rectifier for DC/DC Converters „ 100% UIL tested „ Notebook Vcore/GPU low side switch „ RoHS Compliant „ Networking Point of Load low side switch „ Telecom secondary side rectification Bottom Top Pin 1 D G S 5 4 S S D G 6 3 S D 7 2 S D S D 8 1 D D D Power 56 MOSFET Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter Ratings Units V Drain to Source Voltage 30 V DS V Gate to Source Voltage (Note 4) ±20 V GS Drain Current -Continuous (Package limited) T = 25°C 22 C -Continuous (Silicon limited) T = 25°C 70 C I A D -Continuous T = 25°C (Note 1a) 18 A -Pulsed 100 E Single Pulse Avalanche Energy (Note 3) 33 mJ AS Power Dissipation T = 25°C 36 C P W D Power Dissipation T = 25°C (Note 1a) 2.5 A T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction to Case 3.4 θJC °C/W R Thermal Resistance, Junction to Ambient (Note 1a) 50 θJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDMS0312AS FDMS0312AS Power 56 13 ’’ 12 mm 3000 units ©2010 1 FDMS0312AS Rev.C1
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