FDMQ8203 ,100V Dual N-Channel and Dual P-Channel PowerTrench?MOSFET, GreenBridge?Series of High-Efficiency Bridge RectifiersElectrical Characteristics T = 25 °C unless otherwise notedJSymbol Parameter Test Conditions Type M ..
FDMQ8403 ,100V N-Channel PowerTrench?MOSFET GreenBridge?Series of High-Efficiency Bridge RectifiersGeneral DescriptionThis quad MOSFET solution provides ten-fold improvement in Max r = 110 mΩ at V ..
FDMQ86530L ,60V N-Channel PowerTrench?MOSFET, GreenBridge?Series of High-Efficiency Bridge RectifiersApplications RoHS Compliant Active bridge Diode Bridge replacement in 24V & 48V AC systemsTop Bo ..
FDMS0306AS Applications MSL1 robust package design Synchronous Rectifier for DC/DC Converters 100% UIL test ..
FDMS0308AS Applications MSL1 robust package design Synchronous Rectifier for DC/DC Converters 100% UIL test ..
FDMS0308AS General DescriptionThe FDMS0308AS has been designed to minimize losses in Max r = 2.8 mΩ at V = ..
FP75R12KE3 , Elektrische Eigenschaften / Electrical properties
FP75R12KT3 , EconoPIM3 module with fast trench/fieldstop IGBT3 and EmCon High Efficiency diode
FP75R12KT4 , EconoPIM3 module with trench/fieldstop IGBT4 and EmCon4 diode
FP75R12KT4_B15 , EconoPIM™3 module with trench/fieldstop IGBT4 and Emitter Controlled 4 diode
FP7G150US60 ,Transfer Molded Type IGBT ModuleFeatures• Short Circuit rated 10us @Tc=100C, Vge=15V• High Speed Switching• Low Saturation Voltage ..
FP7G50US60 ,Transfer Molded Type IGBT ModuleFeatures• Short Circuit rated 10us @Tc=100°C, Vge=15V• High Speed Switching• Low Saturation Voltage ..
FDMQ8203
100V Dual N-Channel and Dual P-Channel PowerTrench?MOSFET, GreenBridge?Series of High-Efficiency Bridge Rectifiers
® FDMQ8203 Dual N-Channel and Dual P-Channel PowerTrench MOSFET December 2011 FDMQ8203 TM GreenBridge Series of High-Efficiency Bridge Rectifiers ® Dual N-Channel and Dual P-Channel PowerTrench MOSFET N-Channel: 100 V, 6 A, 110 mΩ P-Channel: -80 V, -6 A, 190 mΩ Features General Description Q1/Q4: N-Channel This quad mosfet solution provides ten-fold improvement in power dissipation over diode bridge. Max r = 110 mΩ at V = 10 V, I = 3 A DS(on) GS D Max r = 175 mΩ at V = 6 V, I = 2.4 A DS(on) GS D Q2/Q3: P-Channel Max r = 190 mΩ at V = -10 V, I = -2.3 A DS(on) GS D Application Max r = 235 mΩ at V = -4.5 V, I = -2.1 A DS(on) GS D High-Efficiency Bridge Rectifiers Substantial efficiency benefit in PD solutions RoHS Compliant Top Bottom S3 7 Q3 (Pch) 6 S2 Q2 (Pch) Pin 1 S3 8 5 S2 G4 G1 D3/ D1/ S4 D4 D2 S1 G3 9 4 G2 S4 S1 S4 10 3 S1 Q4 (Nch) Q1 (Nch) G3 D3/ D1/ G2 D4 D2 S3 S4 11 2 S1 S2 S3 S2 G4 12 G1 1 D3,D4 to backside D1,D2 to backside MLP 4.5x5 (isolated from D1,D2) MOSFET Maximum Ratings T = 25 °C unless otherwise noted A Symbol Parameter Q1/Q4 Q2/Q3 Units V Drain to Source Voltage 100 -80 V DS V Gate to Source Voltage ±20 ±20 V GS Drain Current -Continuous (Package limited) T = 25 °C 6 -6 C -Continuous (Silicon limited) T = 25 °C 10 -10 C I A D -Continuous T = 25 °C (Note 1a) 3.4 -2.6 A -Pulsed 12 -10 Power Dissipation for Single Operation T = 25 °C 22 37 C P W D Power Dissipation for Dual Operation T = 25 °C (Note 1a) 2.5 A T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction to Ambient (Note 1a) 50 θJA °C/W R Thermal Resistance, Junction to Ambient (Note 1b) 160 θJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDMQ8203 FDMQ8203 MLP4.5x5 13 ” 12 mm 3000 units 1 ©2011 FDMQ8203 Rev.C1
