FDME905PT ,-12V P-Channel PowerTrench?MOSFETapplications. Free from halogenated compounds and antimony oxides RoHS CompliantGBottom Drain Con ..
FDMF6700 ,Driver plus FET Multi-chip ModuleBlock DiagramPin Configuration110PWM 40 11 VINDISB VIN(CGND) (VIN)TEST PAD2 VINCGND VINVSWH VSWHVSW ..
FDMF6704 ,XS?DrMOSApplications Integrated bootstrap Schottky diode. Compact blade servers V-core, non V-core and V ..
FDMF6704A ,XS?DrMOSApplications in the low side MOSFET. Integrated bootstrap Schottky diode. Compact blade servers ..
FDMF6704A ,XS?DrMOSfeatures such as SMOD for improved light load® Fairchild's PowerTrench 5 technology MOSFETs for cl ..
FDMF6704V ,XS?DrMOSapplications. The FDMF6704V XS DrMOS Ultra compact thermally enhanced 6 mm x 6 mm MLP integrates a ..
FP75R12KE3 , Elektrische Eigenschaften / Electrical properties
FP75R12KT3 , EconoPIM3 module with fast trench/fieldstop IGBT3 and EmCon High Efficiency diode
FP75R12KT4 , EconoPIM3 module with trench/fieldstop IGBT4 and EmCon4 diode
FP75R12KT4_B15 , EconoPIM™3 module with trench/fieldstop IGBT4 and Emitter Controlled 4 diode
FP7G150US60 ,Transfer Molded Type IGBT ModuleFeatures• Short Circuit rated 10us @Tc=100C, Vge=15V• High Speed Switching• Low Saturation Voltage ..
FP7G50US60 ,Transfer Molded Type IGBT ModuleFeatures• Short Circuit rated 10us @Tc=100°C, Vge=15V• High Speed Switching• Low Saturation Voltage ..
FDME905PT
-12V P-Channel PowerTrench?MOSFET
® FDME905PT P-Channel PowerTrench MOSFET November 2011 FDME905PT ® P-Channel PowerTrench MOSFET -12 V, -8 A, 22 mΩ Features General Description This device is designed specifically for battery charging or load Max r = 22 mΩ at V = -4.5 V, I = -8 A DS(on) GS D switching in cellular handset and other ultraportable applications. Max r = 26 mΩ at V = -2.5 V, I = -7.3 A DS(on) GS D It features a MOSFET with low on-state resistance. Max r = 97 mΩ at V = -1.8 V, I = -3.8 A DS(on) GS D The MicroFET 1.6x1.6 Thin package offers exceptional thermal Low profile: 0.55 mm maximum in the new package performance for its physical size and is well suited to switching MicroFET 1.6x1.6 Thin and linear mode applications. Free from halogenated compounds and antimony oxides RoHS Compliant G Bottom Drain Contact D D 1 6 D D Pin 1 D D 2 5 S D G S 4 3 D TOP BOTTOM MicroFET 1.6x1.6 Thin MOSFET Maximum Ratings T = 25 °C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage -12 V DS V Gate to Source Voltage ±8 V GS Drain Current -Continuous T = 25 °C (Note 1a) -8 A I A D -Pulsed -30 Power Dissipation T = 25 °C (Note 1a) 2.1 A P W D Power Dissipation T = 25 °C (Note 1b) 0.7 A T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction to Case 4.5 θJC R Thermal Resistance, Junction to Ambient (Note 1a) 60 °C/W θJA R Thermal Resistance, Junction to Ambient (Note 1b) 175 θJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity E95 FDME905PT MicroFET 1.6x1.6 Thin 7 ’’ 8 mm 5000 units ©2011 1 FDME905PT Rev.C2
