| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| FDMC8878(30V/16.5A) |
FAI|Fairchild Semiconductor |
N/a |
3000 |
 |
|
FDMC8882 ,30V N-Channel Power Trench?MOSFETGeneral Description Max r = 14.3 m at V = 10 V, I = 10.5 A This N-Channel MOSFET is produced u ..
FDMC8884 ,30V N-Channel Power Trench?MOSFETGeneral Description Max r = 19 mΩ at V = 10 V, I = 9.0 A This N-Channel MOSFET is produced usin ..
FDME1034CZT ,20V Complementary PowerTrench?MOSFETElectrical Characteristics T = 25 °C unless otherwise notedJSymbol Parameter Test Conditions Type M ..
FDME905PT ,-12V P-Channel PowerTrench?MOSFETapplications. Free from halogenated compounds and antimony oxides RoHS CompliantGBottom Drain Con ..
FDMF6700 ,Driver plus FET Multi-chip ModuleBlock DiagramPin Configuration110PWM 40 11 VINDISB VIN(CGND) (VIN)TEST PAD2 VINCGND VINVSWH VSWHVSW ..
FP75R12KE3 , Elektrische Eigenschaften / Electrical properties
FP75R12KT3 , EconoPIM3 module with fast trench/fieldstop IGBT3 and EmCon High Efficiency diode
FP75R12KT4 , EconoPIM3 module with trench/fieldstop IGBT4 and EmCon4 diode
