FDMC8462 ,40V N-Channel Power Trench?MOSFETGeneral Description Max r = 5.8mΩ at V = 10V, I = 13.5A This N-Channel MOSFET is produced usin ..
FDMC8462 ,40V N-Channel Power Trench?MOSFET®FDMC8462 N-Channel Power Trench MOSFETMarch 2008FDMC8462 ..
FDMC8588 ,25V N-Channel PowerTrench?MOSFETApplications RoHS Compliant High side switching for high end computing High power density DC-DC ..
FDMC86102 ,100V N-Channel Shielded Gate Power Trench?MOSFETGeneral Description Max r = 24 mΩ at V = 10 V, I = 7 A This N-Channel MOSFET is produced using ..
FDMC8651 ,30V N-Channel Power Trench?MOSFETGeneral Description Max r = 6.1 mΩ at V = 4.5 V, I = 15 A This device has been designed specifical ..
FDMC8651 ,30V N-Channel Power Trench?MOSFETApplications Synchronous rectifier 3.3 V input synchronous buck switchBottomTopPin 1S 4 GD 5SSGD ..
FP75R12KE3 , Elektrische Eigenschaften / Electrical properties
FP75R12KT3 , EconoPIM3 module with fast trench/fieldstop IGBT3 and EmCon High Efficiency diode
FP75R12KT4 , EconoPIM3 module with trench/fieldstop IGBT4 and EmCon4 diode
FP75R12KT4_B15 , EconoPIM™3 module with trench/fieldstop IGBT4 and Emitter Controlled 4 diode
FP7G150US60 ,Transfer Molded Type IGBT ModuleFeatures• Short Circuit rated 10us @Tc=100C, Vge=15V• High Speed Switching• Low Saturation Voltage ..
FP7G50US60 ,Transfer Molded Type IGBT ModuleFeatures• Short Circuit rated 10us @Tc=100°C, Vge=15V• High Speed Switching• Low Saturation Voltage ..
FDMC8462
40V N-Channel Power Trench?MOSFET
® FDMC8462 N-Channel Power Trench MOSFET March 2008 FDMC8462 tm ® N-Channel Power Trench MOSFET 40V, 20A, 5.8mΩ Features General Description Max r = 5.8mΩ at V = 10V, I = 13.5A This N-Channel MOSFET is produced using Fairchild DS(on) GS D ® Semiconductor‘s advanced Power Trench process that has Max r = 8.0mΩ at V = 4.5V, I = 11.8A DS(on) GS D been especially tailored to minimize the on-state resistance and Low Profile - 1mm max in Power 33 yet maintain superior switching performance. 100% UIL Tested RoHS Compliant Application DC - DC Conversion Pin 1 S S S 5 4 G D G D 6 S 3 D 7 2 S D D D 8 1 S D D Top Bottom Power 33 MOSFET Maximum Ratings T = 25°C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 40 V DS V Gate to Source Voltage ±20 V GS Drain Current -Continuous (Package limited) T = 25°C 20 C -Continuous (Silicon limited) T = 25°C 64 C I A D -Continuous T = 25°C (Note 1a) 14 A -Pulsed 50 E Single Pulse Avalanche Energy (Note 3) 216 mJ AS Power Dissipation T = 25°C 41 C P W D Power Dissipation T = 25°C (Note 1a) 2.0 A T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction to Case 3 θJC °C/W R Thermal Resistance, Junction to Ambient (Note 1a) 53 θJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDMC8462 FDMC8462 Power 33 13’’ 12mm 3000 units 1 ©2008 FDMC8462 Rev.C
