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FDMC7696FAIRCHILDN/a15000avai30V N-Channel PowerTrench?MOSFET


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FDMC7696
30V N-Channel PowerTrench?MOSFET
® FDMC7696 N-Channel PowerTrench MOSFET November 2011 FDMC7696 ® N-Channel PowerTrench MOSFET 30 V, 12 A, 11.5 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild „ Max r = 11.5 mΩ at V = 10 V, I = 12 A DS(on) GS D ® Semiconductor’s advanced Power Trench process that has „ Max r = 14.5 mΩ at V = 4.5 V, I = 10 A DS(on) GS D been especially tailored to minimize the on-state resistance.This device is well suited for Power Management and load switching „ High performance technology for extremely low r DS(on) applications common in Notebook Computers and Portable „ Termination is Lead-free and RoHS Compliant Battery Packs. Applications „ DC/DC Buck Converters „ Notebook battery power management „ Load Switch in Notebook Bottom Top D D D D 8 7 6 5 5 4 G D D 6 S 3 D 7 2 S 8 1 S D G S S S 1 2 3 4 Pin 1 MLP 3.3x3.3 MOSFET Maximum Ratings T = 25 °C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 30 V DS V Gate to Source Voltage (Note 4) ±20 V GS Drain Current -Continuous (Package limited) T = 25°C 20 C -Continuous (Silicon limited) T = 25°C 38 C I A D -Continuous T = 25°C (Note 1a) 12 A -Pulsed 50 E Single Pulse Avalanche Energy (Note 3) 21 mJ AS Power Dissipation T = 25°C 25 C P W D Power Dissipation T = 25°C (Note 1a) 2.4 A T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction to Case 5.0 θJC °C/W R Thermal Resistance, Junction to Ambient (Note 1a) 53 θJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDMC7696 FDMC7696 MLP 3.3x3.3 13 ’’ 12 mm 3000 units ©2011 1 FDMC7696 Rev.C8
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