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FDMC7678FAIRCHILDN/a35avai30V N-Channel PowerTrench?MOSFET


FDMC7678 ,30V N-Channel PowerTrench?MOSFETapplications common in Notebook Computers and Portable „ Termination is Lead-free and RoHS Complian ..
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FDMC7680 ,30V N-Channel Power Trench?MOSFETGeneral Description„ Max r = 7.2 mΩ at V = 10 V, I = 14.8 A This N-Channel MOSFET is produced us ..
FDMC7692 ,30V N-Channel Power Trench?MOSFETGeneral Description Max r = 8.5 m at V = 10 V, I = 13.3 A This N-Channel MOSFET is produced us ..
FDMC7692S General DescriptionThis FDMC7692S is produced using Fairchild Semiconductor’s „ Max r = 9.3 m: at V ..
FDMC7696 ,30V N-Channel PowerTrench?MOSFETApplications„ DC/DC Buck Converters„ Notebook battery power management„ Load Switch in NotebookBott ..
FP75R12KE3 , Elektrische Eigenschaften / Electrical properties
FP75R12KT3 , EconoPIM3 module with fast trench/fieldstop IGBT3 and EmCon High Efficiency diode
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FP7G150US60 ,Transfer Molded Type IGBT ModuleFeatures• Short Circuit rated 10us @Tc=100C, Vge=15V• High Speed Switching• Low Saturation Voltage ..
FP7G50US60 ,Transfer Molded Type IGBT ModuleFeatures• Short Circuit rated 10us @Tc=100°C, Vge=15V• High Speed Switching• Low Saturation Voltage ..


FDMC7678
30V N-Channel PowerTrench?MOSFET
® FDMC7678 N-Channel Power Trench MOSFET June 2011 FDMC7678 ® N-Channel Power Trench MOSFET 30 V, 19.5 A, 5.3 mΩ Features General Description „ Max r = 5.3 mΩ at V = 10 V, I = 17.5 A This N-Channel MOSFET is produced using Fairchild DS(on) GS D ® Semiconductor’s advanced Power Trench process that has „ Max r = 6.8 mΩ at V = 4.5 V, I = 15.0 A DS(on) GS D been especially tailored to minimize the on-state resistance. This „ High performance technology for extremely low r device is well suited for Power Management and load switching DS(on) applications common in Notebook Computers and Portable „ Termination is Lead-free and RoHS Compliant Battery Packs. Application „ DC - DC Buck Converters „ Notebook battery power management „ Load switch in Notebook Bottom Top DD D D 8 7 6 5 D 5 4 G D 6 3 S D 7 S 2 D 8 1 S G S S S 1 2 3 4 Pin 1 MLP 3.3x3.3 MOSFET Maximum Ratings T = 25 °C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 30 V DS V Gate to Source Voltage (Note 3) ±20 V GS Drain Current -Continuous (Package limited) T = 25 °C 19.5 C Drain Current -Continuous (Silicon limited) T = 25 °C 63 C I A D -Continuous T = 25 °C (Note 1a) 17.5 A -Pulsed 70 E Single Pulse Avalanche Energy (Note 4) 54 mJ AS Power Dissipation T = 25 °C 31 C P W D Power Dissipation T = 25 °C (Note 1a) 2.3 A T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction to Case 4.0 θJC °C/W R Thermal Resistance, Junction to Ambient (Note 1a) 53 θJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDMC7678 FDMC7678 MLP 3.3x3.3 13 ’’ 12 mm 3000 units ©2011 1 FDMC7678 Rev. C1
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