FDMC7672S General DescriptionThis FDMC7672S is produced using Fairchild Semiconductor’s Max r = 6.0 m: at V ..
FDMC7672S Applications DC - DC Buck Converters Notebook battery power mangement Load switch in NotebookBot ..
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FDMC7692 ,30V N-Channel Power Trench?MOSFETGeneral Description Max r = 8.5 m at V = 10 V, I = 13.3 A This N-Channel MOSFET is produced us ..
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FDMC7672S
® TM FDMC7672S N-Channel Power Trench SyncFET September 2010 FDMC7672S ® TM N-Channel Power Trench SyncFET 30 V, 14.8 A, 6.0 m: Features General Description This FDMC7672S is produced using Fairchild Semiconductor’s Max r = 6.0 m: at V = 10 V, I = 14.8 A DS(on) GS D ® advanced Power Trench process that has been especially Max r = 7.1 m: at V = 4.5 V, I = 12.4 A DS(on) GS D tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications High performance technology for extremely low r DS(on) common in Notebook Computers and Portable Battery packs. Termination is Lead-free and RoHS Compliant Applications DC - DC Buck Converters Notebook battery power mangement Load switch in Notebook Bottom Top G D 5 4 Pin 1 G S S D 6 3 S S S D 7 2 D D S D 8 1 D D MLP 3.3x3.3 MOSFET Maximum Ratings T = 25 °C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 30 V DS V Gate to Source Voltage ±20 V GS Drain Current -Continuous (Package limited) T = 25 °C 18 C I -Continuous T = 25 °C (Note 1a) 14.8 A D A -Pulsed 45 E Single Pulse Avalanche Energy (Note 3) 60 mJ AS Power Dissipation T = 25 °C 36 C P W D Power Dissipation T = 25 °C (Note 1a) 2.3 A T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction to Case 3.5 °C/W TJC R Thermal Resistance, Junction to Ambient (Note 1a) 53 °C/W TJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDMC7672S FDMC7672S MLP 3.3X3.3 13 ’’ 12 mm 3000 units 1 ©2010 FDMC7672S Rev.C3
