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FDMC7672FairchilN/a4720avai30V N-Channel Power Trench?MOSFET


FDMC7672 ,30V N-Channel Power Trench?MOSFETapplications common in Notebook Computers and Portable „ Termination is Lead-free and RoHS Complian ..
FDMC7672S General DescriptionThis FDMC7672S is produced using Fairchild Semiconductor’s „ Max r = 6.0 m: at V ..
FDMC7672S Applications„ DC - DC Buck Converters„ Notebook battery power mangement„ Load switch in NotebookBot ..
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FDMC7680 ,30V N-Channel Power Trench?MOSFETGeneral Description„ Max r = 7.2 mΩ at V = 10 V, I = 14.8 A This N-Channel MOSFET is produced us ..
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FP75R12KT4 , EconoPIM3 module with trench/fieldstop IGBT4 and EmCon4 diode
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FP7G150US60 ,Transfer Molded Type IGBT ModuleFeatures• Short Circuit rated 10us @Tc=100C, Vge=15V• High Speed Switching• Low Saturation Voltage ..
FP7G50US60 ,Transfer Molded Type IGBT ModuleFeatures• Short Circuit rated 10us @Tc=100°C, Vge=15V• High Speed Switching• Low Saturation Voltage ..


FDMC7672
30V N-Channel Power Trench?MOSFET
® FDMC7672 N-Channel Power Trench MOSFET June 2010 FDMC7672 ®  N-Channel Power Trench MOSFET 30 V, 16.9 A, 5.7 m: Features General Description „ Max r = 5.7 m: at V = 10 V, I = 16.9 A This N-Channel MOSFET is produced using Fairchild DS(on) GS D ® Semiconductor’s advanced Power Trench process that has „ Max r = 7.0 m: at V = 4.5 V, I = 15.0 A DS(on) GS D been especially tailored to minimize the on-state resistance. This „ High performance technology for extremely low r device is well suited for Power Management and load switching DS(on) applications common in Notebook Computers and Portable „ Termination is Lead-free and RoHS Compliant Battery Packs. Application „ DC - DC Buck Converters „ Notebook battery power management „ Load switch in Notebook Bottom Top Pin 1 G 5 4 G D S S S D 6 S 3 D 7 2 S D D D 8 1 S D D MLP 3.3x3.3 MOSFET Maximum Ratings T = 25 °C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 30 V DS V Gate to Source Voltage ±20 V GS Drain Current -Continuous (Package limited) T = 25 °C 20 C I -Continuous T = 25 °C (Note 1a) 16.9 A D A -Pulsed 50 E Single Pulse Avalanche Energy (Note 3) 144 mJ AS Power Dissipation T = 25 °C 31 C P W D Power Dissipation T = 25 °C (Note 1a) 2.3 A T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction to Case 4.0 TJC °C/W R Thermal Resistance, Junction to Ambient (Note 1a) 53 TJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDMC7672 FDMC7672 MLP 3.3x3.3 13 ’’ 12 mm 3000 units ©2010 1 FDMC7672 Rev.C2
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