FDMC3020DC Applications Synchronous Rectifier for DC/DC Converters Telecom Secondary Side Rectification Hig ..
FDMC3300NZA , Monolithic Common Drain N-Channel 2.5V Specified PowerTrench® MOSFET 20V, 8A, 26mΩ
FDMC4435BZ ,-30V P-Channel Power Trench?MOSFETGeneral Description Max r = 20 m at V = -10 V, I = -8.5 A This P-Channel MOSFET is produced ..
FDMC510P ,-20V P-Channel PowerTrench?MOSFETGeneral Description Max r = 8.0 mΩ at V = -4.5 V, I = -12 AThis P-Channel MOSFET is produced ..
FDMC5614P ,-60V P-Channel PowerTrench?MOSFETGeneral Description Max r = 100mΩ at V = -10V, I = -5.7AThis P-Channel MOSFET is a rugged gate ver ..
FDMC6675BZ ,-30V P-Channel Power Trench?MOSFETapplicationsGSS Application High performance trench technology for extremely low rDS(on) Load Sw ..
FP75R12KE3 , Elektrische Eigenschaften / Electrical properties
FP75R12KT3 , EconoPIM3 module with fast trench/fieldstop IGBT3 and EmCon High Efficiency diode
FP75R12KT4 , EconoPIM3 module with trench/fieldstop IGBT4 and EmCon4 diode
FP75R12KT4_B15 , EconoPIM™3 module with trench/fieldstop IGBT4 and Emitter Controlled 4 diode
FP7G150US60 ,Transfer Molded Type IGBT ModuleFeatures• Short Circuit rated 10us @Tc=100C, Vge=15V• High Speed Switching• Low Saturation Voltage ..
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FDMC3020DC
® TM FDMC3020DC N-Channel Dual Cool PowerTrench MOSFET July 2012 FDMC3020DC TM ® N-Channel Dual Cool PowerTrench MOSFET 30 V, 40 A, 6.25 mΩ Features General Description TM Dual Cool Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild ® Semiconductor’s advanced PowerTrench process. Max r = 6.25 mΩ at V = 10 V, I = 12 A DS(on) GS D TM Advancements in both silicon and Dual Cool package Max r = 9.0 mΩ at V = 4.5 V, I = 10 A technologies have been combined to offer the lowest r DS(on) GS D DS(on) while maintaining excellent switching performance by extremely High performance technology for extremely low r DS(on) low Junction-to-Ambient thermal resistance. RoHS Compliant Applications Synchronous Rectifier for DC/DC Converters Telecom Secondary Side Rectification High End Server/Workstation Pin 1 G S S D 5 4 G S D 6 3 S D S D 7 2 D D D D 8 1 S Top Bottom Power 33 MOSFET Maximum Ratings T = 25°C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 30 V DS V Gate to Source Voltage ±20 V GS Drain Current -Continuous (Package limited) T = 25 °C 40 C -Continuous (Silicon limited) T = 25 °C 70 C I A D -Continuous T = 25 °C (Note 1a) 17 A -Pulsed 100 E Single Pulse Avalanche Energy (Note 3) 60 mJ AS dv/dt Peak Diode Recovery dv/dt (Note 4) 1.6 V/ns Power Dissipation T = 25 °C 50 C P W D Power Dissipation T = 25 °C (Note 1a) 3.0 A T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction to Case (Top Source) 7.9 θJC R Thermal Resistance, Junction to Case (Bottom Drain) 2.5 θJC R Thermal Resistance, Junction to Ambient (Note 1a) 42 θJA R Thermal Resistance, Junction to Ambient (Note 1b) 105 °C/W θJA R Thermal Resistance, Junction to Ambient (Note 1i) 17 θJA R Thermal Resistance, Junction to Ambient (Note 1j) 26 θJA R Thermal Resistance, Junction to Ambient (Note 1k) 12 θJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity TM 3020 FDMC3020DC Dual Cool Power 33 13’’ 12 mm 3000 units ©2012 1 FDMC3020DC Rev.C4
