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FDMC2514SDCFAIRCHILDN/a3487avai


FDMC2514SDC Applications„ Synchronous Rectifier for DC/DC Converters„ Telecom Secondary Side Rectification„ Hig ..
FDMC2610 ,200V N-Channel UltraFET Trench MOSFETapplications.„ RoHS Compliant Application„ DC - DC ConversionBottomTopD D D D8 7 6 5GD 5 4D S6 3D 7 ..
FDMC2674 ,220V N-Channel UltraFET Trench MOSFETapplications. „ Typ Q = 12.7nC at V = 10Vg GSOptimized for r , low ESR, low total and Miller gate ..
FDMC3020DC Applications„ Synchronous Rectifier for DC/DC Converters„ Telecom Secondary Side Rectification„ Hig ..
FDMC3300NZA , Monolithic Common Drain N-Channel 2.5V Specified PowerTrench® MOSFET 20V, 8A, 26mΩ
FDMC4435BZ ,-30V P-Channel Power Trench?MOSFETGeneral Description Max r = 20 m at V = -10 V, I = -8.5 A This P-Channel MOSFET is produced ..
FP75R12KE3 , Elektrische Eigenschaften / Electrical properties
FP75R12KT3 , EconoPIM3 module with fast trench/fieldstop IGBT3 and EmCon High Efficiency diode
FP75R12KT4 , EconoPIM3 module with trench/fieldstop IGBT4 and EmCon4 diode
FP75R12KT4_B15 , EconoPIM™3 module with trench/fieldstop IGBT4 and Emitter Controlled 4 diode
FP7G150US60 ,Transfer Molded Type IGBT ModuleFeatures• Short Circuit rated 10us @Tc=100C, Vge=15V• High Speed Switching• Low Saturation Voltage ..
FP7G50US60 ,Transfer Molded Type IGBT ModuleFeatures• Short Circuit rated 10us @Tc=100°C, Vge=15V• High Speed Switching• Low Saturation Voltage ..


FDMC2514SDC

® TM TM FDMC2514SDC N-Channel Dual Cool PowerTrench SyncFET October 2010 FDMC2514SDC TM ® TM N-Channel Dual Cool PowerTrench SyncFET 25 V, 40 A, 3.5 mΩ Features General Description TM „ Dual Cool Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild ® Semiconductor’s advanced PowerTrench process. „ Max r = 3.5 mΩ at V = 10 V, I = 22.5 A DS(on) GS D TM Advancements in both silicon and Dual Cool package „ Max r = 4.7 mΩ at V = 4.5 V, I = 18 A technologies have been combined to offer the lowest r DS(on) GS D DS(on) while maintaining excellent switching performance by extremely „ High performance technology for extremely low r DS(on) low Junction-to-Ambient thermal resistance. This device has the „ SyncFET Schottky Body Diode added benefit of an efficient monolithic Schottky body diode. „ RoHS Compliant Applications „ Synchronous Rectifier for DC/DC Converters „ Telecom Secondary Side Rectification „ High End Server/Workstation Vcore Low Side Pin 1 G S S D G 5 4 S D 6 3 S D S D 7 2 D D D S D 8 1 Top Bottom Power 33 MOSFET Maximum Ratings T = 25°C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 25 V DS V Gate to Source Voltage (Note 4) ±20 V GS Drain Current -Continuous (Package limited) T = 25 °C 40 C -Continuous (Silicon limited) T = 25 °C 106 C I A D -Continuous T = 25 °C (Note 1a) 24 A -Pulsed 200 E Single Pulse Avalanche Energy (Note 3) 84 mJ AS dv/dt Peak Diode Recovery dv/dt (Note 5) 2.0 V/ns Power Dissipation T = 25 °C 60 C P W D Power Dissipation T = 25 °C (Note 1a) 3.0 A T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction to Case (Top Source) 5.8 θJC R Thermal Resistance, Junction to Case (Bottom Drain) 2.1 θJC R Thermal Resistance, Junction to Ambient (Note 1a) 42 θJA R Thermal Resistance, Junction to Ambient (Note 1b) 105 °C/W θJA R Thermal Resistance, Junction to Ambient (Note 1i) 17 θJA R Thermal Resistance, Junction to Ambient (Note 1j) 26 θJA R Thermal Resistance, Junction to Ambient (Note 1k) 12 θJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity TM 2514S FDMC2514SDC Dual Cool Power 33 13’’ 12 mm 3000 units 1 ©2010 FDMC2514SDC Rev.C2
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