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FDMC0310AS
® TM FDMC0310AS N-Channel PowerTrench SyncFET December 2013 FDMC0310AS ® TM N-Channel PowerTrench SyncFET 30 V, 21 A, 4.4 mΩ Features General Description The FDMC0310AS has been designed to minimize losses in Max r = 4.4 mΩ at V = 10 V, I = 19 A DS(on) GS D power conversion application. Advancements in both silicon and Max r = 5.2 mΩ at V = 4.5 V, I = 17.5 A DS(on) GS D package technologies have been combined to offer the lowest r while maintaining excellent switching performance.This DS(on) Advanced package and silicon combination for low r and DS(on) device has the added benefit of an efficient monolithic schottky high efficiency body diode. SyncFET Schottky Body Diode Applications MSL1 robust package design Synchronous Rectifier for DC/DC Converters 100% UIL tested Notebook Vcore/GPU low side switch RoHS Compliant Networking Point of Load low side switch Telecom secondary side rectification Bottom Top Pin 1 S D S S S S D G S D D G D D D D MLP 3.3x3.3 MOSFET Maximum Ratings T = 25 °C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 30 V DS V Gate to Source Voltage (Note 4) ±20 V GS Drain Current -Continuous (Package limited) T = 25°C 21 C -Continuous (Silicon limited) T = 25°C 76 C I A D -Continuous T = 25°C (Note 1a) 19 A -Pulsed 100 E Single Pulse Avalance Energy (Note 3) 66 mJ AS Power Dissipation T = 25°C 36 C P W D Power Dissipation T = 25°C (Note 1a) 2.4 A T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction to Case 3.4 θJC °C/W R Thermal Resistance, Junction to Ambient (Note 1a) 53 θJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDMC0310AS FDMC0310AS MLP 3.3X3.3 13 ’’ 12 mm 3000 units ©2013 1 FDMC0310AS Rev.C6
