FDMA3023PZ ,-30V Dual P-Channel PowerTrench?MOSFETapplications. HBM ESD protection level > 2 kV (Note 3) RoHS Compliant Free from halogenated com ..
FDMA420NZ ,20V Single N-Channel 2.5V Specified PowerTrench?MOSFETApplications HBM ESD protection level > 2.5kV typical (Note 3) Li-lon Battery Pack Free from ha ..
FDMA430NZ ,30V Single N-Channel 2.5V Specified PowerTrench. 甅OSFETApplications HBM ESD protection level > 2.5kV typical (Note 3) Li-lon Battery Pack Free from ha ..
FDMA430NZ ,30V Single N-Channel 2.5V Specified PowerTrench. 甅OSFETFeaturesThis Single N-Channel MOSFET has been designed using R = 40m @ V = 4.5 V, I = 5.0A ..
FDMA510PZ ,-20V Single P-Channel PowerTrench?MOSFETapplications. Low profile - 0.8mm maximum - in the new package MicroFET 2X2 mm HBM ESD protection ..
FDMA510PZ ,-20V Single P-Channel PowerTrench?MOSFETfeatures a MOSFET with low on-state resistance. Max r = 50m: at V = –1.8V, I = –5.5ADS(on) GS DThe ..
FP75R12KE3 , Elektrische Eigenschaften / Electrical properties
FP75R12KT3 , EconoPIM3 module with fast trench/fieldstop IGBT3 and EmCon High Efficiency diode
FP75R12KT4 , EconoPIM3 module with trench/fieldstop IGBT4 and EmCon4 diode
FP75R12KT4_B15 , EconoPIM™3 module with trench/fieldstop IGBT4 and Emitter Controlled 4 diode
FP7G150US60 ,Transfer Molded Type IGBT ModuleFeatures• Short Circuit rated 10us @Tc=100C, Vge=15V• High Speed Switching• Low Saturation Voltage ..
FP7G50US60 ,Transfer Molded Type IGBT ModuleFeatures• Short Circuit rated 10us @Tc=100°C, Vge=15V• High Speed Switching• Low Saturation Voltage ..
FDMA3023PZ
-30V Dual P-Channel PowerTrench?MOSFET
® FDMA3023PZ Dual P-Channel PowerTrench MOSFET January 2013 FDMA3023PZ ® Dual P-Channel PowerTrench MOSFET -30 V, -2.9 A, 90 mΩ Features General Description This device is designed specifically as a single package solution Max r = 90 mΩ at V = -4.5 V, I = -2.9 A DS(on) GS D for the battery charge switch in cellular handset and other Max r = 130 mΩ at V = -2.5 V, I = -2.6 A DS(on) GS D ultra-portable applications. It features two independent P-Channel MOSFETs with low on-state resistance for minimum Max r = 170 mΩ at V = -1.8 V, I = -1.7 A DS(on) GS D conduction losses. When connected in the typical common Max r = 240 mΩ at V = -1.5 V, I = -1.0 A source configuration, bi-directional current flow is possible. DS(on) GS D Low profile - 0.8 mm maximum - in the new package MicroFET The MicroFET 2X2 package offers exceptional thermal 2x2 mm performance for its physical size and is well suited to linear mode applications. HBM ESD protection level > 2 kV (Note 3) RoHS Compliant Free from halogenated compounds and antimony oxides PIN 1 S1 G1 D2 S1 1 6 D1 1 1 1 1 1 1 6 6 6 6 6 6 D1 D2 G1 2 G2 5 2 2 2 2 2 2 5 5 5 5 5 5 D2 3 4 S2 3 3 3 3 3 3 4 4 4 4 4 4 D1 G2 S2 MicroFET 2x2 MOSFET Maximum Ratings T = 25 °C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage -30 V DS V Gate to Source Voltage ±8 V GS Drain Current -Continuous (Note 1a) -2.9 I A D -Pulsed -6 Power Dissipation (Note 1a) 1.4 P W D Power Dissipation (Note 1b) 0.7 T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG Thermal Characteristics R Thermal Resistance for Single Operation, Junction to Ambient (Note 1a) 86 θJA R Thermal Resistance for Single Operation, Junction to Ambient (Note 1b) 173 θJA °C/W R Thermal Resistance for Dual Operation, Junction to Ambient (Note 1c) 69 θJA R Thermal Resistance for Dual Operation, Junction to Ambient (Note 1d) 151 θJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity 323 FDMA3023PZ MicroFET 2X2 7 ’’ 8 mm 3000 units ©2013 1 FDMA3023PZ Rev.C
