IC Phoenix
 
Home ›  FF8 > FDLL4448,Small Signal Diode
FDLL4448 Fast Delivery,Good Price
Part Number:
If you need More Quantity or Better Price,Welcom Any inquiry.
We available via phone +865332716050 Email
Partno Mfg Dc Qty AvailableDescript
FDLL4448FAIRCHILDN/a30000avaiSmall Signal Diode


FDLL4448 ,Small Signal Diode1N/FDLL 914/A/B / 916/A/B / 4148 / 44481N/FDLL 914/A/B / 916/A/B / 4148 / 4448Small Signal DiodeAbs ..
FDLL457A ,Small Signal DiodeFDLL457AFDLL457ACOLOR BAND MARKING COLOR BAND MARKING DEVICE 1ST BAND 2ST B ..
FDM 6296 ,30V Single N-Channel, Logic-Level, PowerTrench MOSFETApplications Point of Load Converter 1/16 Brick Synchronous RectifierMicroFETBottom Top85 47656 37 2 ..
FDM2452NZ , Monolithic Common Drain N-Channel 2.5V Specified PowerTrench MOSFET
FDM2452NZ , Monolithic Common Drain N-Channel 2.5V Specified PowerTrench MOSFET
FDM2452NZ , Monolithic Common Drain N-Channel 2.5V Specified PowerTrench MOSFET
FP75R12KE3 , Elektrische Eigenschaften / Electrical properties
FP75R12KT3 , EconoPIM3 module with fast trench/fieldstop IGBT3 and EmCon High Efficiency diode
FP75R12KT4 , EconoPIM3 module with trench/fieldstop IGBT4 and EmCon4 diode
FP75R12KT4_B15 , EconoPIM™3 module with trench/fieldstop IGBT4 and Emitter Controlled 4 diode
FP7G150US60 ,Transfer Molded Type IGBT ModuleFeatures• Short Circuit rated 10us @Tc=100C, Vge=15V• High Speed Switching• Low Saturation Voltage ..
FP7G50US60 ,Transfer Molded Type IGBT ModuleFeatures• Short Circuit rated 10us @Tc=100°C, Vge=15V• High Speed Switching• Low Saturation Voltage ..


FDLL4448
Small Signal Diode
1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 Small Signal Diode Absolute Maximum Ratings* T = 25°C unless otherwise noted A Symbol Parameter Value Units V Maximum Repetitive Reverse Voltage 100 V RRM I Average Rectified Forward Current 200 mA F(AV) I Non-repetitive Peak Forward Surge Current FSM Pulse Width = 1.0 second 1.0 A Pulse Width = 1.0 microsecond 4.0 A T Storage Temperature Range -65 to +200 °C stg Operating Junction Temperature 175 T °C J *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 200 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol Characteristic Max Units 1N/FDLL 914/A/B / 4148 / 4448 P Power Dissipation 500 mW D Thermal Resistance, Junction to Ambient 300 R °C/W θJA 2002 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448, Rev. B
ic,good price


TEL:86-533-2716050      FAX:86-533-2716790
   

©2020 IC PHOENIX CO.,LIMITED